Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1985-1989  (3)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 921-926 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have prepared a stable two phase graphite intercalation compound (GIC) containing KC8 and KCsC16 by immersing CsC24 into liquid K at 70 °C. High resolution x-ray diffraction studies reveal that the KCsC16, which exhibits a stage one c-axis stacking sequence of ⋅⋅⋅ C K C Cs C K C Cs ⋅⋅⋅ is an ideal ternary heterostructure GIC with a c-axis repeat distance of dH=11.27 A(ring) and correlation range of 350 A(ring). The intensities of the (00l) x-ray diffraction pattern calculated on the basis of the proposed c-axis repeat sequence are in excellent agreement with the experimental observations. The KCsC16 in plane structure is a (2×2)R0 ° superlattice with an in plane correlation range of 140 A(ring). The ordered intercalant layers stack along the c axis with an α,β,γ,δ site sequence, where, e.g., α,γ=K and β,δ=Cs, and stacking faults occur on average every 30 A(ring).
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4662-4665 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cryobaric (11–100 K and 300 K, 0–65 kbar) measurements of photoluminescence in GaAs/AlxGa1−xAs multiquantum well structures are described. Results on a narrow-well (38 A(ring) wide) structure exhibiting both quantum well and bulk GaAs emission (from a thick buffer region) allow direct comparison of the two for the first time. We find that transitions between Γ-derived n=1 confined levels have the same pressure coefficient, within ±0.2 meV/kbar, as the bulk E0 gap, 11.4 meV/kbar. An interaction between n=1 electron states and a state 35–40 meV below the X-conduction minima is observed within the pressure-induced Γ-X crossover region for our narrow-well sample. The proposed origin of the latter state is residual interface impurities.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1112-1114 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used Raman backscattering to characterize GaAs/AlAs superlattices grown by metalorganic chemical vapor deposition technique. Diffusion across the GaAs and AlAs interfaces can be observed by studying the optic and folded acoustic phonon scattering. Observation of light scattering from folded acoustic phonons in metalorganic chemical vapor deposition grown samples suggests the ability of the technique in monitoring the layer-to-layer uniformity of superlattices. Using a simple, analytic model we estimate the interfacial width to be 20 A(ring).
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...