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  • 1
    Electronic Resource
    Electronic Resource
    Ruby thermometer for cryobaric diamond-anvil cell (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 910-913 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The ruby R-line luminescence, commonly used as a manometer in diamond-anvil cell experiments, is shown also to be a useful thermometer over the range 10–100 K. Measurements up to 120 kbar in a solid Ar pressure medium demonstrate that the intensity ratio of the two R lines is thermally activated; in agreement with elementary theory the activation energy is given by the R1–R2 splitting. Based on this dependence, the in-situ temperature of the diamond-anvil cell sample chamber can be determined with ∼10% accuracy over 10–100 K. To apply the ruby thermometer method, no additional effort is needed beyond that already incurred in the standard ruby pressure measurement. The method remains applicable under conditions of moderately nonhydrostatic pressure. The problem of laser heating is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138833
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  • 2
    Electronic Resource
    Electronic Resource
    New diamond-anvil cell design for far infrared magnetospectroscopy featuring in situ cryogenic pressure tuning (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2883-2889 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel diamond-anvil cell (DAC) adaptation for far infrared (FIR) cryogenic magnetospectroscopy in a small-bore magnet is reported. A design featuring a multibellows ram is employed to generate amplified force for in situ pressure tuning of the DAC at cryogenic temperatures without increasing the overall diameter of the apparatus. A constructed version, using a 26-mm-diam double-bellows ram, is capable of producing 5 kN force (scalable to 10 kN with four bellows) when driven by 4He at 4.2 K. Signals are enhanced using paraboloidal cones to focus the FIR radiation on the sample and collect the transmitted signal. It is feasible to record transmission spectra to energies as low as 80 cm−1 with this apparatus using appropriate gasket-hole sizes and detectors. The pressure, magnetic field, and temperature can be tuned independently in the ranges 0–20 GPa (in steps as small as 0.05 GPa), 0–15 T, and 2–300 K. We present high pressure (4.2 K) Fourier-transform FIR spectra at fixed magnetic fields, and laser (118.8 μm) magnetospectroscopy data on the 1s–2p+ transition of Si donors in GaAs measured with this apparatus. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147121
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Cryogenic-pressure response of optical transitions in quantum well and bulk GaAs: A direct comparative study (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4662-4665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cryobaric (11–100 K and 300 K, 0–65 kbar) measurements of photoluminescence in GaAs/AlxGa1−xAs multiquantum well structures are described. Results on a narrow-well (38 A(ring) wide) structure exhibiting both quantum well and bulk GaAs emission (from a thick buffer region) allow direct comparison of the two for the first time. We find that transitions between Γ-derived n=1 confined levels have the same pressure coefficient, within ±0.2 meV/kbar, as the bulk E0 gap, 11.4 meV/kbar. An interaction between n=1 electron states and a state 35–40 meV below the X-conduction minima is observed within the pressure-induced Γ-X crossover region for our narrow-well sample. The proposed origin of the latter state is residual interface impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336239
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  • 4
    Electronic Resource
    Electronic Resource
    Raman scattering studies of metalorganic chemical vapor deposition grown GaAs/AlAs superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1112-1114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used Raman backscattering to characterize GaAs/AlAs superlattices grown by metalorganic chemical vapor deposition technique. Diffusion across the GaAs and AlAs interfaces can be observed by studying the optic and folded acoustic phonon scattering. Observation of light scattering from folded acoustic phonons in metalorganic chemical vapor deposition grown samples suggests the ability of the technique in monitoring the layer-to-layer uniformity of superlattices. Using a simple, analytic model we estimate the interfacial width to be 20 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339718
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  • 5
    Electronic Resource
    Electronic Resource
    Anomalies in the pressure response of the Raman modes in (211)-oriented InxGa1−xAs/GaAs strained-layer superlattices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1417-1419 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phonon spectra of InxGa1−xAs/GaAs strained-layer superlattices grown on (100), or either one of the two inequivalent (211)A and B surfaces of GaAs were obtained by Raman scattering for pressures ranging from 1 atm to 13.0 GPa. The measurements show that phonon frequencies are discontinuous functions of pressure for (211)A superlattices in contrast to the continuous behavior observed for (100) and (211)B-oriented superlattices. These discontinuities are discussed in terms of pressure induced increase in the density of heterointerface dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107556
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Strain mapping in [111] and [001] InGaAs/GaAs superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 286-288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented InxGa1−xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one-mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in InxGa1−xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102810
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    Paper (German National Licenses)
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