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Strain mapping in [111] and [001] InGaAs/GaAs superlattices (1990)

Venkateswaran, U. D. ; Cui, L. J. ; Li, M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 286-288

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented InxGa1−xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one-mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in InxGa1−xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102810

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