Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 1417-1419
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The phonon spectra of InxGa1−xAs/GaAs strained-layer superlattices grown on (100), or either one of the two inequivalent (211)A and B surfaces of GaAs were obtained by Raman scattering for pressures ranging from 1 atm to 13.0 GPa. The measurements show that phonon frequencies are discontinuous functions of pressure for (211)A superlattices in contrast to the continuous behavior observed for (100) and (211)B-oriented superlattices. These discontinuities are discussed in terms of pressure induced increase in the density of heterointerface dislocations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107556
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