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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen surface coverage: Raising the silicon epitaxial growth temperature (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2017-2019 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemisorption of molecular hydrogen onto the Si (100) surface is shown to disrupt the epitaxial growth of silicon and silicon/germanium alloys grown by molecular beam epitaxy. It is only after the substrate temperature is raised above the hydrogen desorption temperature, or the deposition rate is lowered, that high quality single-crystal films can be grown. The results also suggest the surface segregation of hydrogen during growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102149
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  • 2
    Electronic Resource
    Electronic Resource
    Variation in misfit dislocation behavior as a function of strain in the GeSi/Si system (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 925-927 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show how strained-layer relaxation via misfit dislocation introduction varies significantly in GexSi1−x/Si (100) epitaxy as a function of the strain in this system. It is found that for samples grown by molecular beam epitaxy at a substrate temperature of 550 °C, structures with lower strain (x=0.15) are highly metastable, relaxing most of their excess stress on annealing to temperatures ∼650–750 °C. Structures with higher strain (x=0.25) are observed to relax far more gradually over the temperature range 550–900 °C. In situ electron microscope observations explain this behavior in terms of misfit dislocation interactions in the relaxing material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100810
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  • 3
    Electronic Resource
    Electronic Resource
    Kinematical simulation of high-resolution x-ray diffraction curves of GexSi1−x/Si strained-layer superlattices: A structural assessment (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1152-1154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction (HRXRD) measurements of GexSi1−x/Si strained-layer superlattices are carried out using a four-crystal monochromator. A wide asymmetric range of extremely sharp higher order x-ray satellite peaks is observed indicating a well-defined strained-layer superlattice with abrupt interfaces. This is further confirmed by cross-section transmission electron microscopy. Using a kinematical diffraction step model which assumes ideally sharp interfaces, the thickness, strain, and composition of the GexSi1−x well could be extracted. Excellent agreement between measured and simulated x-ray satellite patterns is achieved. These results show that HRXRD together with kinematical simulation provides a powerful tool to evaluate the structural perfection of GexSi1−x/Si strained-layer superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99189
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal stability of Si/GexSi1−x/Si heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1900-1902 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of Si/GexSi1−x/Si (100) heterostructures is studied by in situ electron microscope observations of the thermal relaxation process. Structures are observed to relax by misfit dislocation propagation at both strained interfaces, and are stable to significantly higher temperatures than equivalent strained GexSi1−x layers at a free surface. This observed difference in thermal stability between double and single interface structures is due at least in part to much lower dislocation velocities in the double interface structures, with a measured glide activation energy approximately twice as high as single interface structures. It is argued that this difference in glide activation energies may be due to a smaller kink nucleation activation energy in the single interface structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102165
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  • 5
    Electronic Resource
    Electronic Resource
    In situ observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1605-1607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe in situ electron microscrope observations of the motion of misfit dislocations in Ge0.3Si0.7/Si(100) heterostructures. A 350 A(ring) Ge0.3Si0.7/Si(100) structure is grown by molecular beam epitaxy at 550 °C. Although this is below the critical thickness for this composition and growth temperature, we observe misfit dislocation nucleation and propagation as a function of in situ annealing temperature in the electron microscope. This confirms the metastable nature of GeSi strained-layer growth. The misfit dislocation density increases continuously with temperature, passing through an accelerated transition at ∼850 °C. We also report preliminary measurements of misfit dislocation velocity, which establish the identical relationship between threading and misfit dislocations in this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99055
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of substrate surface structure on nucleation of GaAs on Si(100) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1723-1725 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the effect of surface structure upon the nucleation of GaAs in molecular beam epitaxy growth on vicinal Si(100) surfaces. In general, cross-sectional transmission electron microscopy reveals that nucleation of GaAs islands is associated with surface steps produced by the deliberate substrate misorientation. Furthermore, it is found that standard in situ cleaning of the Si surface prior to deposition can result in steps grouping together, producing local surface facets. GaAs nucleation then occurs on these facets, the nucleation sites being correspondingly further apart than for an equilibrium distribution of monolayer steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98556
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  • 7
    Electronic Resource
    Electronic Resource
    Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 546-548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An atomistic growth model is used to explain sidewall facet and defect formation during selective epitaxial growth of (001) silicon. Films grown through oxide windows with {110} sidewall orientations exhibit facets (typically {311} planes) adjacent to the sidewall. This region also has a high density of twins. Films grown in windows oriented to have {100} sidewalls have no sidewall facets and a very low defect density. The facet morphology and twin formation at {110} sidewalls are both explained by the influence of the oxide on nucleation of {111} planes. Similar considerations indicate that films grown along {100} sidewalls are less susceptible to facet and defect formation, as observed. Experimental data on film morphology and defect structure are used to support the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99412
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  • 8
    Electronic Resource
    Electronic Resource
    Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 910-912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga0.47In.53As/InP quantum well structures grown by atmospheric pressure organometallic vapor phase epitaxy are characterized by high-resolution transmission electron microscopy (HRTEM) and 4 K photoluminescence (PL). Microdensitometer analysis of the HRTEM images shows GaInAs wells as narrow as 10 A(ring) with slightly asymmetric interface widths. The InP to GaInAs transitions occur within 200 monolayers while the GaInAs to InP transitions are 3–5 monolayers wide, probably due to As carryover. 4 K PL shows half-widths below 9 meV for quantization shifts up to 140 meV. PL peak shifts as large as 395 meV for the narrowest quantum wells are observed compared to bulk Ga0.47In0.53As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98798
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  • 9
    Electronic Resource
    Electronic Resource
    Detailed atomic scale structure of AlInAs/GaInAs quantum wells (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2688-2692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantification of high-resolution transmission electron microscopy (HRTEM) lattice images and detailed luminescence line-shape analysis is used to determine the atomic structure of GaInAs quantum wells (QWs) between AlInAs barriers. By careful analysis of a statistically large number of HRTEM images, we are able to measure the standard deviation in the mean quantum-well width to better than one (200) monolayer. Statistical analysis of the temperature dependence of the luminescence yields QW width distribution functions and variations of the mean QW width across the sample with a precision of better than 0.2 nm in quantitative agreement with the transmission electron microscopy results. No large and smooth islands with monolayer steps in between but rather long-range mean band-gap fluctuations are observed. Spectral broadening is found to be induced by well-width-dependent roughness of inequivalent growth surfaces and by clustering in the barriers for extremely narrow wells of the order Lz≈1 nm. Our results indicate a pronounced surface roughening of InGaAs at 640 °C. The mean height of steps of a maximum width of 5 nm at the InGaAs surface increases from 1 to 2 monolayers for an increase of well width from ≈1 to 2.5 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342753
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of GeSi/Si strained-layer superlattices using limited reaction processing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2407-2409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe/Si superlattices were grown using limited reaction processing. Each multilayer structure was fabricated in situ by changing the gas composition between high-temperature cycles. Commensurate SiGe alloy layers as thin as 15 nm were reproducibly deposited and were examined using transmission electron microscopy, sputtering Auger electron spectroscopy, and Rutherford backscattering. Si/SiGe interfaces are abrupt to within a few monolayers, establishing for the first time the use of a chemical vapor deposition technique to fabricate abrupt GeSi/Si-based heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337960
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