Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1985-1989  (2)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Temperature effects on the photoluminescence of GaAs grown on Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 45-47 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence properties of as-grown and post-growth annealed GaAs directly grown on Si substrates by metalorganic vapor phase epitaxy are studied at various temperatures. At low temperature, three extrinsic lines and an intrinsic exciton line split by residual biaxial tensile stress are observed. The extrinsic lines give evidence of growth-induced defects. One of these lines, involving the presence of Si acceptors, appears after post-growth annealing (10 min at 800 °C). The biaxial stress deduced from the intrinsic lines varies with temperature; extrapolation to zero stress results in a temperature slightly below the growth temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100829
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Charge state controlled short- and long-range defect motions in GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1973-1975 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the charge state dependent annealing reactions for a defect (H2, 0.4 eV) in p-type GaAs following room-temperature electron irradiation. Using deep level transient spectroscopy, it is shown that one of two absolutely different defect reaction branches is chosen depending on the junction bias condition. The ranges of defect motion involved in these two reactions are markedly different: When the H2 center is emptied of hole it disappears near room temperature by several defect jumps to the near neighbor sites, whereas when it is occupied with hole it annihilates at 370–380 K by long-range defect motion. The observed defect motions are well described by the simple charge state effect upon the defect which has two distinct reaction branches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99594
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...