Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 3331-3333
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GdTbCo films were rf diode sputtered from a composite target varying the argon pressure PAr and the substrate bias voltage Vb. Both the uniaxial magnetic anisotropy constant Ku and the aging behavior of the films depend strongly on the preparation parameters. The absolute maximum of Ku was obtained at Vb=−150 V. However, at this bias voltage nearly the highest oxidation rate of unprotected 100-nm-thick films was observed. Films of highest stability are obtained without any bias voltage. The oxidation rate is correlated with the Ar concentration in the films. It was argued recently that the anisotropy of sputtered films could depend on argon incorporation. Our results seem to rule out this mechanism since GdTbCo films prepared at zero bias show a relative Ku maximum in dependence on PAr where the argon concentration is near its absolute minimum. The magneto-optic Kerr rotation θK of the films can only be correlated with the Co concentration for zero bias films. Some additional variation depending on the bias voltage has been observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338788
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