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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2300-2306 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relative importance between the thermodynamical driving force and kinetics in thermal annealing and ion mixing in the thermally activated regime has not been clarified. To probe the role of the thermodynamical driving force in reactions between metals and silicon, the Co-Si system was chosen for investigation. In general, three silicide phases are formed during thermal annealing of samples consisting of Co thin films deposited on Si substrates, i.e., Co2Si (the first phase to form with a heat of formation, ΔHf=−9 kcal/g atoms), CoSi (ΔHf=−12 kcal/g atoms), and CoSi2 (the last phase to form, with ΔHf=−8.2 kcal/g atoms). Previous experiments have shown that annealing a sample of Si/CoSi/Co converts CoSi into Co2Si instead of a continuous growth of CoSi. This type of reaction is apparently unrelated to the magnitude of the thermodynamical driving force since ΔHf of CoSi is significantly larger than those of Co2Si and CoSi2, but is kinetically restricted instead. Under ion mixing conditions the kinetic restriction is expected to relax due to enhanced atomic mobilities under ion irradiation; the ion-induced reactions should then be driven by thermodynamics; i.e., growth of the phase with the largest ΔHf is favored. In this work, phase formation induced thermally and with ion mixing in the Co-Si system was investigated using Rutherford backscattering spectrometry and x-ray diffraction (Read camera). It was found that in thermal annealing, Co2Si is the first phase to form and Co is the dominant moving species in the formation of Co2Si, in agreement with previous results. In ion mixing, both CoSi and Co2Si are observed to form. At low temperatures, the formation of CoSi dominates. As the substrate temperature is increased, the formation of Co2Si becomes more significant. Co and Si are found to be the dominant moving species in the ion-beam-assisted formation of Co2Si and CoSi, respectively. By introducing the concept of an effective heat of formation, initial phase formation in both ion mixing and thermal annealing can be rationalized in terms of the thermodynamical driving force.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1621-1625 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistance of the Ge/Pd and Si/Pd metalization scheme on n-GaAs was investigated. These two contact systems are based on solid-phase reactions, thus leading to nonspiking ohmic contacts to n-GaAs. The experimental results show that the ohmic behavior is likely due to both a highly doped surface n+ region and/or a small barrier at the interface. The origin of this small barrier and nonlinear current-voltage characteristics for certain samples are also discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 942-947 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low resistance nonalloyed ohmic contact to n-GaAs is formed which utilizes the solid-phase epitaxy of Ge through PdGe. Discussion focuses on the conditions necessary to attain low specific contact resistivity (∼10−6 Ω cm2 on 1018 cm−3 n-GaAs) and on the interfacial morphology between the contact metallization and the GaAs substrate. MeV Rutherford backscattering spectrometry and channeling show the predominant reaction to be that of Pd with amorphous Ge to form PdGe followed by the solid-phase transport and epitaxial growth of Ge on 〈100〉 GaAs. Cross-sectional transmission electron microscopy and lattice imaging show a very limited initial Pd-GaAs reaction and a final interface which is planar and structurally abrupt to within atomic dimensions. The presence of excess Ge over that necessary for PdGe formation and the placement of Pd initially in contact with GaAs are required to result in the lowest contact resistivity. The experimental data suggest a replacement mechanism in which an n+-GaAs surface region is formed when Ge occupies excess Ga vacancies.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1330-1334 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the Er and ErSi2 contacts on p-Si. A correlation is found between the barrier height and the presence of an interfacial oxide layer. Samples with a thin interfacial oxide (∼ 3 A(ring)) exhibit a barrier height of 0.68 eV. In contrast, samples without any detectable interfacial oxide show a higher barrier height of ∼0.8 eV. The barrier heights were determined by current-voltage measurements and the thicknesses of the interfacial oxide were measured by the 16O(d,α)14 N nuclear reaction technique.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5880-5884 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers grown by hydride vapor phase epitaxy using N2 as a carrier gas were studied. Charge transport measurements at temperatures as high as 416 K and as low as 38 K were made on layers grown on (100)-, (311)B-, (511)B-, and (110)- oriented substrates. Resistivities in the range 4×106–2×1010 Ω cm were obtained in all cases except for growth on (311)B surfaces. In that case resistivities were in the range 1×103–5×107 Ω cm. Detailed fitting to I-V data was done using a two trap model, and a good fit was obtained if traps lying at 0.68 and 0.30 eV below the conduction band were included. The deeper lying trap concentration which gave the best fit was in the range 1–8×1015 cm−3. This level corresponds to the Fe3+(arrow-right-and-left)Fe2+ transition which is usually observed in semi-insulating bulk and MOCVD grown Fe-doped InP and which compensates the background donors. A concentration lying in the range 2–20×1018 cm−3 must be used for the 0.30-eV trap to produce a good fit. The presence of this trap at such a large concentration also explains our observations that the Fermi level moves up in the band gap as the temperature is decreased. We speculate that this trap is N impurity related. Secondary-ion-mass spectrometry results rule out the possibility that the 0.30-eV trap is Fe related. Low-temperature photoluminescence spectra typical of Fe-doped InP were obtained and revealed a broad band at 1.1 eV. Such a band has been commonly reported for bulk InP:Fe and is usually assigned to an Fe related deep level. Our results suggest that this assignment may not be correct for our material.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2354-2358 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The moving species during ion beam mixing of Si/Ni and Si/Pt bilayers were investigated at temperatures between liquid-nitrogen temperature (LN2) and 180 °C using imbedded markers and Rutherford backscattering. For Si/Ni samples irradiated with Ar ions, the flux ratio of Si to Ni decreased from 1.6 to 0.2 as the substrate temperature increased from LN2 to 180 °C. Over this range of substrate temperatures, the individual amount of Si atoms transported was found to remain unchanged; whereas the transport flux of Ni atoms was observed to increase. Similar temperature dependence of the flux ratio was found for the Si/Pt system. The experimental results indicate that the substantial Si motion is due to the temperature-independent part of ion mixing which is associated with collision cascades. The Ni motion is characteristic of radiation-enhanced diffusion which is substrate temperature dependent.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1527-1536 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni2Si, while Si is the diffusing species in CrSi2. In Pd2Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1601-1605 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The barrier heights of Er and ErSi2 on oxide-free p-Si have been reported to be identical (φpB ∼0.8 eV), suggesting that the stoichiometry of the metallic contact does not appear to affect the barrier heights as long as a specific metal is present at the interface. In this work, the effects of Ge in the Er film on the barrier height have been investigated. Our results show that the ratio of Ge to Er in an Er/(GexSi1−x)2 compound layer in contact with p-Si affects the barrier heights significantly. A linear relationship between φpB and x has been found and can be expressed as φpB =0.778 −(2x) (0.098). This experimental finding indicates that the barrier height of a metallic compound on Si may depend not only on the metal species, but also on the composition of the compound.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 618-619 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions of Pd/SiC and Ni/SiC samples during thermal annealing are investigated by x-ray diffraction (Read camera) and MeV ion backscattering spectrometry. Metal rich silicides, Pd3Si and Ni31Si12, are found to form first, followed by the formation of Pd3Si and Ni2Si at consecutively high temperature annealing. The reaction temperatures of Pd/SiC and Ni/SiC samples are much higher compared to those of Pd/Si and Ni/Si samples. Carbon compounds were not detected in either the Pd/SiC or Ni/SiC systems within the temperature range investigated in this study.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4172-4177 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions between Ni-W alloys and Si〈100〉 substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by sputtering of Ni-W alloys, both Ni-rich and W-rich, onto the Si〈100〉 substrates, and followed by either furnace annealing (200–900 °C) or ion mixing (2×1015– 4×1016 86Kr+ ions/cm2). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). In general, thermal annealing and ion mixing lead to similar reactions. Phase separation between Ni and W with Ni silicides formed next to the Si substrate and W silicide formed on the surface was observed for both Ni-rich and W-rich samples under thermal annealing. Phase separation was also observed for Ni-rich samples under ion mixing; however, a Ni-W-Si ternary compound was possibly formed for ion-mixed W-rich samples. These reactions were rationalized in terms of the mobilities of various atoms and the energetics of the systems.
    Type of Medium: Electronic Resource
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