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  • 1985-1989  (9)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Formation of intermediate phases, Ni3Si2 and Pt6Si5: Nucleation, identification, and resistivity (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3458-3466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of Ni3Si2 from the reaction of Ni2Si with NiSi, and that of Pt6Si5 from the reaction of Pt2Si with PtSi have been investigated by Rutherford backscattering, x-ray diffraction, resistance measurements, and optical and electronic microscopy. Standard x-ray diffraction patterns were calculated for Pt6Si5 and for the high-temperature form (hexagonal) of Pt2Si. These are shown to match experimental diffraction patterns. Both Ni3Si2 and Pt6Si5 form quite suddenly (at 470 and 535 °C, respectively) according to the pattern of nucleation-controlled reactions which are anticipated when the free energies of formation of the new phases are sufficiently small. These observations are discussed with respect to the absence of both Ni3Si2 and Pt6Si5 from the sequence of phases which form when Ni and Pt thin films react with Si. Resistivity measurements are reported for Ni3Si2, Pt6Si5, and for the two forms (low and high temperature) of Pt2Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336815
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion of Sb, Ga, Ge, and (As) in TiSi2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5335-5345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium, Sb, and Ge were implanted into thick (about 400 nm) layers of TiSi2 prepared by metal-silicon reaction. The diffusion of the implanted atoms was analyzed by means of secondary ion mass spectrometry. Gallium was introduced because a former study had shown that the usual p-type dopant B does not diffuse in TiSi2. Germanium was used in lieu of a Si tracer. Its diffusion characteristics are compared to those of P and As (as well as Si) which had been investigated previously. Germanium and Ga diffuse readily above 600 °C, but Sb does not. Its diffusion appears to be limited to grain-boundary effects. Accumulations of the diffusing atoms are observed (except for Sb) at the silicide-silicon interface. These are due to kinetic effects, namely fast diffusion at grain boundaries and interfaces, rather than to real adsorption which is an equilibrium condition. Because diffusion in intermetallic compounds has been shown to be significantly affected by variations in stoichiometry, experiments were conducted with films implanted not only with foreign atoms but with Ti as well. These did not lead to significantly different observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340399
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Disilicide solid solutions, phase diagram, and resistivities. II. TaSi2-WSi2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2203-2211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preparation of TaSi2-WSi2 alloys from the reaction of Si with Ta-W films allows one to explore the constitution diagram of the TaSi2-WSi2 pseudobinary system. The structure of the alloys has been investigated by means of Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. The "equilibrium'' phase diagrams for the system TaSi2-WSi2 and for TiSi2-WSi2 are compared in light of simple ideas of alloy theory based on the consideration of the electron to atom ratios. The resistivity of the alloys is analyzed in terms of what has been established about the transport properties of the disilicides and of possible contributions of structural defects, mostly stacking faults, to scattering processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337981
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  • 4
    Electronic Resource
    Electronic Resource
    Oxidation studies of SiGe (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1724-1728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the kinetics and mechanism of oxidation of SiGe alloys deposited epitaxially onto Si substrates by low-temperature chemical vapor deposition. Ge is shown to enhance oxidation rates by a factor of about 3 in the linear regime, and to be completely rejected from the oxide so that it piles up at the SiO2/SiGe interface. We demonstrate that Ge plays a purely catalytic role, i.e., it enhances the reaction rate while remaining unchanged itself. Electrical properties of the oxides formed under these conditions are presented, as well as microstructures of the oxide/substrate, Ge-enriched/SiGe substrate, and SiGe/Si substrate interfaces, and x-ray photoemission studies of the early stages of oxidation. Possible mechanisms are discussed and compared with oxidation of pure silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342945
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal relaxation of pseudomorphic Si-Ge superlattices by enhanced diffusion and dislocation multiplication (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4693-4698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic Si/Si-Ge strained layer superlattices are metastable and will relax to lower-energy, less strained, states on thermal annealing. Such relaxation may occur by the generation of misfit dislocation or by compositional homogenization of the superlattice. The particular mechanism adopted is shown to depend on the initial dislocation density of the structures. In cases where a significant portion of the strain is accommodated by an array of misfit dislocations in the as-grown state there is a propensity to relax by generating additional misfit dislocations. In the case of structures where only a very small fraction of the misfit is relieved by dislocations in the as-grown state, additional relaxation does not involve the multiplication of dislocations but proceeds by the interdiffusion of Si and Ge towards the homogenizing of the superlattice structure. This strain-enhanced diffusion has previously been observed in metals and we confirm its existence in semiconductor systems as well. The implication of the above observations on device structures and the growth of such layers is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343245
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  • 6
    Electronic Resource
    Electronic Resource
    The diffusion of elements implanted in films of cobalt disilicide (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2973-2980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of several elements implanted into layers of CoSi2 with a nominal thickness of 800 nm, grown by metal-silicon reaction, has been studied by secondary ion mass spectroscopy. Boron has by far the highest mobility. It is totally homogenized by heat treatment for 0.5 h at 800 °C; it displays evidence of grain-boundary diffusion at 400 °C and of lattice diffusion at 450 °C. The next group of elements, gallium, phosphorus, and germanium (used as a tracer in lieu of a silicon isotope) diffuse distinctly less rapidly, and remain nonhomogenized after annealing at 800 °C. The lattice diffusion of arsenic and antimony is not detectable (by the means presently used), even after heat treatment at the same relatively high temperature. Low-temperature effects, and effects far away from the implanted region, are dominated by grain-boundary diffusion. The lattice diffusion increases from boron to phosphorus and germanium, with activation energies determined to be 2.0 and 2.7 eV for boron and phosphorus, respectively. The results are discussed by comparison with those previously obtained with TiSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341560
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  • 7
    Electronic Resource
    Electronic Resource
    Dopant redistribution during oxidation of SiGe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 751-753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter compares diffusion of boron in Si during oxidation both for pure Si and for Si covered with a very thin layer of SiGe alloy. It demonstrates that the thin layer of SiGe suppresses oxidation enhanced diffusion of boron. A mechanism is proposed based on suppression of Si interstitials. This phenomenon is then related to the faster rate of oxidation of bulk SiGe and SiGe-covered Si samples reported previously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100882
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  • 8
    Electronic Resource
    Electronic Resource
    Ion beam amorphization of YBa2Cu3Ox (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1462-1464 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of ion-implanted thin films of the superconductor YBa2Cu3Ox has been investigated by transmission electron microscopy. The superconducting properties of the films were dominated by large pancake-shaped grains of YBa2Cu3Ox with their c axis perpendicular to the substrate. Other grains of YBa2Cu3Ox whose c axis was parallel to the substrate formed spherulites. Irradiation with 500 keV O+ ions caused amorphous zones to appear on the grain boundaries between the pancake grains, which initially were free of amorphous or second phases. At higher dose a continuous amorphous layer 150 A(ring) thick was formed. However, the interior of the grains showed no irradiation-induced microstructural features until they became amorphous at a dose of 3×1014 ions/cm2. The appearance of the amorphous layer on the grain boundaries at low doses accounts for the reduction in the superconducting transition temperature observed in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98658
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  • 9
    Electronic Resource
    Electronic Resource
    Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 644-646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rates of oxidation of SiGe and of Si covered with a thin "marker'' of Ge have been measured, and compared with rates of oxidation for pure Si, both for wet and dry ambient. It is shown that the presence of Ge at the SiO2/Si interface increases the rate of wet oxidation by a factor of about 2.5, while it does not affect the rate of dry oxidation. By decreasing the partial pressure of H2O sufficiently, the rate of wet oxidation can be decreased to match that of dry oxidation. In this case again, Ge has no effect on the rate. Contrary to what has been proposed before, Ge is being piled up at the interface both for fast and slow oxidation. We demonstrate that the role of Ge is to suppress the formation of Si interstitials and that this is the rate limiting step in cases of rapid oxidation. For slower oxidation, interstitials have considerably more time to diffuse away and thus their formation and/or diffusion is not rate limiting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100905
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