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  • 1985-1989  (3)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Thermal characteristics of matrix-addressed liquid-crystal display (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1055-1062 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal characteristics of matrix-addressed smectic liquid-crystal cells are studied using the temperature dependence of the resistance of the heater and detector lines and compared to analytic solutions. The cell behavior is most strongly affected by the thermal properties of the substrate near the liquid crystal if the heater is at that interface. Cell features further away from the heater have a smaller influence. The cell power efficiency improves if the thermal flow through the substrate is reduced relative to the liquid crystal. The cell addressing speed can be increased if the substrate has two layers composed of a thin insulator on a conducting layer. Increasing the insulator thickness improves efficiency but reduces speed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334547
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Solid phase regrowth of low temperature Be-implanted GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1022-1028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared reflection and transmission measurements were used to study the thermally induced regrowth of (100) oriented, Be-implanted GaAs samples. The samples used in this study were implanted at low temperature (−100 °C) with 250-keV Be ions to a fluence of 6×1015 cm−2. The samples were postannealed at temperatures ranging from 100 to 550 °C. Isochronal and isothermal annealing at a series of temperatures between 180 and 240 °C were performed. Infrared reflection spectra were analyzed by using a three or four layer dielectric model. Analysis of the annealing data suggests that an amorphous layer first anneals to a second metastable amorphous state and then becomes a damaged crystalline layer after annealing at 220 °C for 12 h. The observed regrowth is not by a simple epitaxial process. After annealing at 400 °C for 1 h, the damage in the layer is reduced sufficiently for the refractive index to recover almost to the preimplantation value. On annealing at 450 °C free carriers are observed. From the measured average regrowth rate for the amorphous layer at various anneal temperature, an effective activation energy is estimated to be about 1.45 eV. This compares with activation energies of 2.3 eV for Si and 2.0 eV for Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334542
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Transplants of Normal Fetal Cerebral Cortical Tissue into Congenitally Malformed Brains of Infant Rats (1987)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 495 (1987), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1987.tb23725.x
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    Paper (German National Licenses)
    Fulltext
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