ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Previously Tsuchiya and Uematsu reported their discovery of a photoinduced effect in which the decrease ΔHp of ferromagnetic resonance field of surface spin-wave modes in the H+2 -implanted layer of YIG thin films is observed during light irradiation at 77 K, and etching depth dependence of ΔHp is measured. The decrease ΔHp in as-implanted films is attributed mainly to generation of Fe2+ ions with hydrogen presence. The main hydrogen distribution has been introduced from the study.1 Here the authors describe ΔHp relaxation as the irradiation is turned on and off in the cases of as-implanted films and films covered with a sputtered SiO2 layer, before and after annealing. (111)-oriented YIG films are used. The energy of H+2 implantation is 30 keV and the dose is 1×1016 ions per cm2. The FMR frequencies are 9.2–9.4 GHz. First, an as-implanted film is irradiated for 10 min without applying a magnetic field and then after removing the irradiation ΔHp is able to be observed (class II). Next, ΔHp is measured to increase during irradiation with a field (class I), and then after removing ΔHp decreases to a class II level. Class I and II are explained from "one-center model'' and "two-center model'' of photoinduced magnetic anisotropy effect,2 respectively. Relaxation of ΔHp mentioned above, as well as that of ΔHp about films covered with SiO2 are measured and their particular properties are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338450
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