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  • 1985-1989  (4)
Materialart
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5353-5359 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have made in situ mass spectral measurements and x-ray photoelectron spectroscopy (XPS) measurements at the surface of a diamond film growing on a platinum substrate. We measured the concentrations of CH4, C2H4, and C2H2 and detected additional species with from three to ten carbon atoms. The gas-phase chemical kinetics controlling the concentrations of the C1 and C2 species was modeled, and agreement between the calculated and measured concentrations was good. The presence or absence of the platinum foil had no effect on the measured concentrations, showing that heterogeneous chemistry on platinum did not affect the gas-phase environment. XPS spectra were taken during the course of the diamond growth without exposing the platinum foil to air. After exposure to a room-temperature CH4/H2 mixture but before any growth, the platinum surface was mostly covered with graphitic carbon. Once growth was initiated the graphitic layer was gradually replaced by 1–3 monolayers of hydrocarbon material, which did not thicken with time. Finally, the hydrocarbons were replaced or covered by a diamond film. CO titration experiments demonstrated that practically no active platinum atoms were exposed to the gas-phase reactants during growth. This fact explains the lack of activity of the platinum foil.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 416-417 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Filament-assisted chemical vapor deposition (CVD) diamond film growth on Si(100) was studied using x-ray photoelectron spectroscopy (XPS) to examine the sample at selected intervals during the nucleation and growth processes. The sample was transferred under vacuum from the growth chamber to the attached XPS analysis chamber without exposure to air. Before growth XPS showed that the Si sample is covered by a layer of SiO2 and carbonaceous residue; however, after 15 min of growth both of these substances are removed and replaced by a distinct SiC layer [Si(2p)=100.3 eV and C(1s)=282.7 eV].
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1605-1607 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have measured mole fractions of two of the major stable species at the surface of a silicon substrate during filament-assisted diamond growth as a function of the filament-to-substrate distance. Input gases were methane and hydrogen. A quartz probe withdrew gases at the growing surface, and the gases were sampled with an on-line mass spectrometer. Close to the filament the methane is largely consumed, with most of the remaining gas phase carbon in the form of acetylene. Mass spectral results are compared to compositions calculated with a detailed chemical kinetics model. Our initial analysis suggests that diamond growth comes mainly from reaction of acetylene, ethylene, methane, or methyl radical.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2179-2181 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In situ mass spectral measurements of gas composition at the substrate surface were made during filament-assisted diamond growth. The input gases were various mixtures of CH4, O2, and H2 chosen in order to discern the effects of oxygen addition on diamond formation and growth. The gas phase chemistry was modeled as a one-dimensional flow reactor, and the measured and calculated species mole fractions were in good agreement. The model was then used to estimate mole fractions of several atomic and radical species which could not be measured. We find that addition of O2 has only a small effect on the radical mole fractions. However, O2 can reduce the effective initial hydrocarbon mole fraction, which is important because higher quality diamond is grown at a lower initial hydrocarbon mole fraction. Most important, perhaps is that O2 addition leads to the formation of sufficient gas phase OH to remove nondiamond (pyrolytic) carbon from the film. Thus, O2 addition allows diamond films to be grown under composition and temperature conditions which otherwise would produce largely nondiamond carbon.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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