Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 318-320
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The structural aspects and annealing behavior of induced damage by Ga+ ion implantation of a GaAs single quantum well as investigated by transmission electron microscopy are presented. After rapid thermal annealing, vacancy and interstitial perfect dislocation loops are found on 〈110〉 and 〈111〉 type planes. In contrast to previous results from superlattices of AlGaAs/GaAs, we find dislocation loops in the AlGaAs as well as in the GaAs layer. The cathodoluminescence intensity of the implanted quantum well recovers completely after annealing.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339152
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