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  • 1980-1984  (9)
  • Polymer and Materials Science  (9)
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  • 1
    Electronic Resource
    Electronic Resource
    Reibung und Verschleiß. Mechanismen - Prüftechnik - Werkstoffeigenschaften. Hrsg. K.-H. Zum Gahr. 244 S., zahlr. Abb. Alphabetisches Stichwortverzeichnis. DGM Informationsgesellschaft mbH, Oberursel 1983. Geb., 16 × 23,5 cm. ISBN 3-88355-064-7. DM 87,- (1984)
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 35 (1984), S. 318-318 
    Details
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/maco.19840350608
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Quantitative evaluation of AES-depth profiles of thin anodic oxide films (Ta2O5/Ta, Nb2O5/Nb) (1983)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 5 (1983), S. 210-216 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Thin films of anodically formed Ta2O5 and Nb2O5 on polycristalline Ta and Nb, respectively, are analysed with AES during sputtering with Ar+ ions at energies between 0.5 keV and 5 keV. A sputtering induced depletion of oxygen at the surface is observed in both oxides. The kinetics of this depletion and the steady-state composition at the surface of the samples are studied as a function of the primary ion energy. The results are interpreted using a modification of the model of Ho et al. (1976) for the preferential sputtering of alloys. The thickness of the transient layer increases non-linearly from 1.6 to 3.4 nm with increasing ion energy. Below 2 keV, the surface depletion of oxygen increases with decreasing ion energy and is constant above 2 keV up to 5 keV. The results are similar for both oxides. At 2 keV, the minimum measured width of the oxide/metal interface is 2 nm for Ta2O5/Ta and is about two times larger for Nb2O5/Nb. In both cases it increases with the square root of the ion energy and it is independent on the oxide layer thickness between 10 nm and 150 nm.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740050507
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Quantification of preferential sputtering and contamination overlayer effects in AES sputter profiling (1984)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 6 (1984), S. 78-81 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A model calculation is presented for the quantitative evaluation of AES sputtering profiles of thin layers in the case of preferential sputtering and a contamination overlayer. The model is based on the statistical contribution to depth resolution, the escape depth effect correction and the preferential sputtering model of Ho et al. (1976). Applications to measured AES sputtering profiles of the anodic oxides Ta2O5 and Nb2O5 allow the determination of the thickness and the oxygen content of the contamination overlayer.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740060208
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Quantitative depth profiling in surface analysis: A reviewInvited paper presented at the International Conference on Quantiative Surface Analysis, Teddington, UK, 16-17 october 1979. (1980)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 2 (1980), S. 148-160 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: After a brief survey of the various non-destructive and destructive methods used for obtaining in-depth composition profiles, the generally applicable method of ion sputtering in combination with a surface analysis technique is discussed in more detail. The quantitative evaluation of sputtering profiles requires the conversion of a measured signal intensity versus sputtering time into a true concentration versus distance from the original surface. Basically, this procedure comprises the quantification of the surface analysis method applied and the sputtering rate, both being dependent on sample composition. Furthermore, various phenomena limit the quantitative evaluation of depth profiles; the most important of which are ion and/or electron beam induced changes of surface composition and surface microtopography. Different factors such as information depth, ion beam inhomogeneity, original and beam induced roughness, knock-on and atomic mixing effects, preferential sputtering, enhanced atomic migration etc. are discussed with respect to their influence on depth resolution and its dependence on sputter depth. Model calculations and their comparison with experimental data reveal the influence of these factors. In conclusion, the basic requirements for the optimization of sputter profiling are stated.
    Additional Material: 19 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740020406
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Crater edge profling of Ni/Cr sandwich multilayer thin films by scanning Auger microscopy (sam) (1980)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 2 (1980), S. 183-186 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The principle of the technique of crater edge profiling is described as an alternative method to conventional sputter profiling. The predictions for the lateral composition profile assuming a Gaussian intensity distribution of the primary ion beam are tested for a multilayer sandwich structure of Ni/Cr layers of 11.5 nm single layer thicknesses after Ar+ ion sputtering through 20 layers and scanning Auger microscopy with a 10 µm diameter electron beam. Due to the small angle of 44.3″ of the slope of the crater formed by ion sputtering, a magnification factor (lateral variation/depth variation) of 5 × 103 is obtained.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740020506
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Low energy nitrogen implantation profiles in cobalt using AES (1980)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 2 (1980), S. 187-190 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Using AES in combination with argon depth profiling, low energy (0.5-5 keV) nitrogen implantation profiles were determined. The profiles show reasonable agreement to the Schulz-Wittmaack model of ion collection during sputtering when the effect of the finite escape depth of the Auger electrons is taken into account. The projected ranges of nitrogen in cobalt obtained when using this model shows reasonable correspondence with the LSS-calculated ones.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740020507
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of contamination layers by emission angle dependent XPS with a double-pass CMA (1984)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 6 (1984), S. 75-77 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The use of non destructive depth profiling by emission angle dependent XPS analysis is demonstrated for a thin contamination layer consisting of carbon, hydrogen and hydride-bonded oxygen on top of an anodic oxide of Nb2O5 on Nb. Using a double-pass CMA with an angle resolved aperture and measured intensity ratios of O 1s (hydroxide)/O 1s (oxide) and O 1s (hydroxide-/C 1s) as a function of the emission angle, the thickness (d = 3.3 nm) and composition are determined.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740060207
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Depth resolution factor of a static gaussian ion beam (1981)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 3 (1981), S. 235-239 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The dependence of the depth resolution on the contribution of a Gaussian crater shape and the finite width of a Gaussian excitation beam (and/or Gaussian acceptance function) is considered. The results show that for Auger electron spectroscopy depth profiling, the contribution of the beam shapes to the depth resolution can, in most cases, be neglected. With X-ray photoelectron spectroscopy and secondary ion mass spectroscopy depth profiling, care has to be taken to obtain a well resolved depth profile.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740030602
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    The use of plasmon-loss peaks in studying the epitaxial silicon on alumina interfacePaper presented at the International Conference on Quantitative Surface analysis held at the National Physical Laboratory, Teddington, UK, 24-25 November 1981. (1982)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 4 (1982), S. 156-159 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Intense plasmon-loss features excited by kilovolt electron beams used in AES have been used to study the Si on Al2O3 interface. Variable electron beam energies provide a means of continuously varying the electron escape depth and subsequently removing this contribution from the plasmon-depth profiles. Parametrically varying the ion energy extrapolation of the interface width to zero ion energy yields an intrinsic interface width of 13±4 å, or about six Si atom layers.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740040406
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    Paper (German National Licenses)
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