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  • 1985-1989  (2)
  • 1975-1979  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 150-152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high purity GaAs layers with 77 K electron mobility values as high as 210 000 cm2/V s and a compensation ratio as low as ≈0.05 (NA+ND≈1014 cm−3) have been grown by organometallic vapor phase epitaxy. 4.2 K photoluminescence and magnetophotoluminescence spectra of these layers confirm their high purity. The degree of material purity and the compensation are found to be controllably dependent on the growth conditions, the optimum growth temperature being about 650 °C at a V:III ratio of 17.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99034
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Resonant photoluminescence excitation in GaAs grown directly on Si (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 213-215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light-hole photoluminescence (PL) region, one identified with a free-exciton process and the other with donor-related transitions. Inhomogeneous line broadening was observed for the excitonic PL lines and related to stress fluctuations. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=1 ground state to an n=2 state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100134
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Directional correlation measurements in69Ga (1976)
    Springer
    The European physical journal 276 (1976), S. 341-345 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Gamma-gamma directional correlation measurements have been made on the 553.35-318.63, 234.79–871.98 and 1,052.02-871.98 keV cascades in69Ga from the decay of69Ge using a NaI(Tl)-Ge(Li) coincidence set up. On the basis of these measurements the spin parity of 1/2−, 3/2−, 3/2− and 5/2− have been assigned respectively to the 318.63, 871.98, 1,106.77 and 1,924.00 keV states in69Ga. The results have been discussed and compared with the previous works.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01548301
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Nuclear level structure of low lying levels of109Cd (1977)
    Springer
    The European physical journal 280 (1977), S. 377-382 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Nuclear level structure of low lying levels of109Cd from109In decay has been investigated by gamma-gamma angular correlation experiments using a Ge(Li)-NaI(Tl) fast coincidence arrangement. From the measurement on the 347.4−326.3, 347.4–650.1, 287.7–650.1, 203.3–420.5, 203.3–619.3 keV cascades spin-parity assignments of 5/2+,1/2+,7/2+,5/2+, 7/2+,5/2+,9/2+, and 9/2+, have been made to the ground, 59.5, 203.3, 347.4, 623.8, 673.7, 822.5 and 997.5 keV states, respectively, of109Cd. The results have been discussed and compared with the previous works.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01435447
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    Paper (German National Licenses)
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