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  • 1975-1979  (4)
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Year
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 12 (1977), S. 277-281 
    ISSN: 1432-0630
    Keywords: 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract PbS−PbSe−PbS double-heterostructure lasers have been pulse-operated at about 200 K mounted on 4 stage thermoelectric coolers. Emitting at a wavelength of about 5.5 μm they could be used for NO gas spectroscopy. Operation temperatures of up to 230 K have been achieved with structures consisting ofn-type PbS substrates and epitaxial layers ofn-type PbSe and Tl dopedp-type PbS. The temperature dependence of the threshold current density and the emission wavelength of these DH-lasers was compared with PbSe-homojunction lasers. The use of a germanium etalon for a quick evaluation of the spectral quality of the emitted radiation is described.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 20 (1979), S. 189-206 
    ISSN: 1432-0630
    Keywords: 42.55 Px ; 07.65 Gj
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fundamental material properties of Pb1−xSnxTe, PbS1−xSex and Pb1−xSnxSe are reviewed. Expressions for the temperature and compositional dependences of the band parameters and dielectric constants based on recently published data are presented. As far as device technology is concerned, crystal growth techniques and diode fabrication procedures which are in use today are reviewed and compared. A comprehensive summary of laser properties like threshold current density, output power, efficiency, maximum operating temperature and tuning range of different diode structures are presented. Application related aspects such as long term stability are treated. Recent progress in laser theory is applied to explain experimentali th vs.T curves. The various laser applications are reviewed briefly. A new technique for monitoring gas concentrations using pulsed lasers and an integral method for signal processing is discussed and compared with the differential absorption, derivative spectroscopy. A long-path trace-gas monitoring system incorporating this new technique is presented.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 10 (1975), S. 1360-1366 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Properties of PbS1−x Se x , epilayers deposited onto PbS substrates by hot-wall epitaxy (HWE) have been investigated. By compensating with a secondary selenium vapour source, both n- and p-type epilayers with carrier concentrations up to 1018 cm−3 have been obtained. Alloy compositions were determined using an X-ray method and found to be dependent upon the selenium furnace temperatures used during growth. Diodes were fabricated from wafers consisting of n-type substrates and p-type PbS1−x Se x epilayers of various compositions. Typical R 0 A products are 5 ω cm2 for x=0.70. Microprobe analysis indicated that the junctions are abrupt. Diode properties were found to be strongly dependent upon the qualities of the substrates used for epitaxy deposition.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 12 (1977), S. 317-322 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The control of the sulphur compensation during growth of high quality n-type epitaxial lead-salt films is described. The experimentally observed degree of compensation cannot be explained by the phase diagram. Quantitatively it agrees well with the partial dissociation of the lead-salt molecules originating from the evaporation source. The carrier type of the films has been found to depend on the substrate material. Representative results for PbS, BaF2 and NaCl substrates are summarized.
    Type of Medium: Electronic Resource
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