ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Radioactive119In+ ions (T 1/2=2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mössbauer emission spectra from the 24 keV γ-radiation of the daughter119Sn have been measured by fast resonance-counting technique. Five independent lines, characterized by their hyperfine parameters and Debye temperatures, have been found in the spectra. From the bonding configurations, deduced for the Sn impurity atoms, these are concluded to be located in four different defects in the silicon lattice. Simple models are proposed for the defects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01021527
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