Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (6)
  • 1970-1974  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8159-8162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral patterning of highly doped silicon-on-insulator films allows us to observe conductance oscillations due to single-electron charging effects. In our devices, silicon nanostructures are embedded into a metal–oxide–silicon configuration. The single-electron effects can be tuned both by an in-plane sidegate, as well as by a metallic topgate, a technology which is compatible with large-scale integration of single-electron devices with dimensions down to 10 nm. We compare the influence of different gating electrodes, important for ultralarge scale integration, on the electron islands. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368399
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    From scarless fetal wounds to keloids: Molecular studies in wound healing (2003)
    Malden, USA : Blackwell Science Inc
    Wound repair and regeneration 11 (2003), S. 0 
    Details
    ISSN: 1524-475X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Surgical researchers were among the first to describe the different phases of wound healing and the events in tissue repair and regeneration that were taking place during each phase. The understanding of these events has been significantly enhanced in recent years by modern techniques in molecular and cellular biology. In this article, we discuss new findings in scarless fetal repair, angiogenesis in wound healing, and keloid pathogenesis. This serves to highlight the advances that have been made and also how much remains to be understood. (WOUND REP REG 2003;11:411–418)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1524-475X.2003.11604.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Fabrication and integration possibilities of ultrasmall quantum dots in silicon-on-insulator material (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 942-946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-electron transistors utilizing Coulomb blockade effects are promising candidates for future silicon based nanoelectronics. We present the fabrication of such transistors and measurements that reveal Coulomb blockade behavior. Various silicon quantum dots are investigated up to room temperature. We employ a dual gate configuration with which we are able to control our devices by both a metallic top gate as well as by an in-plane gate. This design principle enhances the integration density. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379352
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Single-crystalline silicon lift-off films for metal–oxide–semiconductor devices on arbitrary substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 558-560 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a technique to mount single-crystalline silicon thin films on arbitrary substrates. We demonstrate in detail the preparation of a 190-nm-thin silicon metal–oxide–semiconductor field-effect transistor (MOSFET) on a silicon-on-insulator film lifted from its substrate and bonded to quartz. Functioning of this hybrid MOSFET on a rigid surface at room temperature is demonstrated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127043
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Structural studies of diazine oximes. II. The crystal and molecular structure of anti-4-pyrimidinecarboxaldehyde oxime (1974)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 30 (1974), S. 793-796 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567740874003724
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Structural studies of diazine oximes. I. The crystal and molecular structure of syn-4-pyrimidinecarboxaldehyde oxime (1973)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 29 (1973), S. 2260-2263 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567740873006448
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Differentielle Wirkungsquerschnitte und Spinpolarisation für elastische Streuung langsamer Elektronen an Sb4-Molekülen (1971)
    Springer
    The European physical journal 246 (1971), S. 348-362 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Differential cross sections and spin polarization of low-energy electrons elastically scattered by Sb4-molecules have been measured between 50 and 1000 eV from 20 to 150° and have been calculated theoretically on the basis of the independent-atom model (IAM). The interatomic distance in the Sb4-molecule is found to be 2.9±0.1 Å. In spite of its simple assumptions the IAM gives an acceptable description of the scattering at energies 〉 100 eV, except for the deep minima of the cross section and the sharp maxima of the polarization, where intramolecular plural scattering plays an important role. At energies 〈 100 eV this simple theoretical description breaks down, since here the atomic scattering amplitudes become defective and the IAM ceases to be applicable. Better results can still be obtained if a pseudopotential simulating exchange according to Yates is used in addition to the atomic potential for calculating the atomic scattering amplitudes. Despite of considerable improvement, however, the theoretical results remain unsatisfactory at 50 eV, an indication that the IAM is no longer valid. The importance of the exchange pseudopotential, which has a considerably larger range than the atomic potential, shows that at smaller energies the outer tail of the potential becomes relevant for the atomic scattering amplitudes. Then, because of the close vicinity of the atoms in the molecule, the IAM is no longer able to describe the molecular scattering correctly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01395736
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Single-electron tunneling in silicon nanostructures (2000)
    Springer
    Applied physics 71 (2000), S. 357-365 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 85.30.Vw; 85.30.Yy; 07.10.Cm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. We present a brief overview on different realizations of single-electron devices fabricated in silicon-on-insulator films. Lateral structuring of highly doped silicon films allows us to observe quasi-metallic Coulomb blockade oscillations in shrunken wires where no quantum dot structure is geometrically defined. Embedding quantum dot structures into the inversion channel of a silicon-on-insulator field-effect transistor Coulomb blockade up to 300 K is observed. In contrast to the quasi-metallic structures, in these devices the influence of the quantum mechanical level spacing inside the dot becomes visible. Suspending highly doped silicon nanostructures leads to a novel kind of Coulomb blockade devices allowing both high-power application as well as the study of electron–phonon interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390000549
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Buchbesprechungen (1974)
    Springer
    Computing 12 (1974), S. 383-386 
    Details
    ISSN: 1436-5057
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02253340
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Role of apoptosis in autoimmunity (2000)
    Springer
    Apoptosis 5 (2000), S. 443-449 
    Details
    ISSN: 1573-675X
    Keywords: apoptosis ; autoimmunity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Apoptosis is a physiological form of cell death required to ensure that the rate of cell division is balanced by the rate of cell death in multicellular organisms. Dysregulation of apoptosis is associated with the pathogenesis of a wide array of diseases: cancer, neurodegeneration, autoimmunity, heart disease and others. In this review we collect arguments supporting a hypothesis of a dysregulated apoptosis leading to development of autoimmunity like systemic lupus erythematosus (SLE). This notion is supported by occurence of known autoantigens in apoptotic blebs, in vitro findings of an increased rate of apoptotic lymphoblasts despite optimal cytokine stimulation combined with a defective in vitro clearance of apoptotic bodies by SLE phagocytes. Moreover, we and others could generate histone-specific lymphocytic cell lines from cells after activation with autologous apoptotic material. These lymphocytes could stimulate autologous B-lymphocytes to produce of anti-dsDNA antibodies, a diagnostic hallmark for SLE. Finally, antibodies against phospholipids like phosphatidylserine are often associated with systemic autoimmunopathies like SLE and others. Phosphatidylserine is exposed on apoptotic cells as early sign of programmed cell death and serves as phagocyte recognition molecule for apoptotic cells. Formation of immune complexes and deposition in tissues might lead to organ damage and disease. This scenario will be discussed in this review in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009692902805
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...