Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (31)
  • 1970-1974  (6)
  • 1
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Results of measurements of the reflected beam intensity and photoelectron yield under conditions of dynamical 111/220 diffraction of synchrotron x-ray radiation are presented. The experiments were carried out on beam lines 15C and 14B at the Photon Factory. Two possible multicrystal arrangements were used for the preprocessing of the incident beam. In the first one, a double-crystal Si (111) monochromator was used for monochromation and collimation of the x-ray beam in the vertical plane and a Si (220) channel-cut crystal was used for collimation in the horizontal plane. The second crystal arrangement is based on a (111)-oriented Si crystal adjusted for a six-beam Laue diffraction condition. The anomalously transmitted (μt/γ0 ≈ 40) beam was used as an incident beam in the x-ray standing wave measurements. The angular dependence of the total photoelectron yield was measured using a gas flow proportional counter.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 54 (1990), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Freeze-dried sections (14 μm thick) of retinal layers were prepared from mice with retinal degeneration (C3H strain) and control mice (C57BL strain). The weighed sections (2–30 ng dry weight) were analyzed using our microassay methods. In the control retina, γ-aminobutyric acid (GABA) concentration and glutamate decarboxylase (GAD) activity, on a dry weight basis, increased from birth to 9 weeks of age and decreased slightly at 20 weeks. In the degenerated retina, the levels of GABA and GAD activity were higher at birth than in the control retina, and continued to increase until 20 weeks of age, at which time the GAD activity reached a markedly high level. This increase was found when the total GABA and GAD levels per retina were determined. In the normal retinal layers, GABA and GAD were confined primarily to the inner plexiform layer. In the degenerated retina, GAD activity gradually increased in the inner layers during postnatal development, but by 20 weeks the increase was most prominent in the inner part of inner nuclear layer and in the outer part of inner plexiform layer. GABA transaminase activity and its distribution were not much different in both normal and degenerated retinas during development.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 347-351 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A few mololayers of InAs is heteroepitaxially grown on GaAs substrate by molecular-beam epitaxy. Structure and optical properties are investigated. Reflection high-energy electron-diffraction observation reveals that an InAs layer forms a three-dimensional structure with specific facets after two-dimensional growth. The transmission electron microscope observation shows that these structures have structural anisotropy in the growth plane. Photoluminescense spectroscopy shows that the luminescence from the InAs structures exhibits the polarization property caused by the quantum dot effect of the structural anisotropy.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2189-2193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of luminescence studies for free-standing CdZnS/ZnS strained layer superlattices (SLSs). The band discontinuity is estimated by an analysis of the luminescence results in terms of a finite-potential well model. CdZnS/ZnS SLSs are grown by metal-organic vapor phase epitaxy at 350 °C on (100) GaAs. Photoluminescence (PL) measurements of the CdZnS/ZnS SLS at 1.4 K show intense, sharp excitonic emission in the blue-ultraviolet spectral region. With decreasing CdZnS well width, the PL peaks shift to higher energy. The quantum transition energies are calculated, including the effect of exciton binding energy and elastic strain. A free-standing SLS is assumed. In a Cd0.3Zn0.7S/ZnS SLS, the analysis of the data yields a zero-stress band discontinuity of ΔEc=461 meV and ΔEv=88 meV, which is in extremely good agreement with the data calculated from Harrison's model (465 and 84 meV, respectively). The band discontinuity over the entire Cd composition range is also estimated.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2246-2248 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examined high-resolution diffraction profiles of as-grown and annealed magnetic-field-applied Czochralski (MCZ) silicon crystals which were about 300 μm thick and [001] oriented, and compared these profiles with the ultraplane wave x-ray topographs. Rocking curves for the symmetric 220 diffraction were measured in the Laue geometry using a (+m, −n, +n) separated three-crystal monochromator. Strain introduced in the sample preparation process gave a reduced oscillatory profile of a rocking curve although chemical etching recovered subsidiary peaks of the rocking curve. Strain frozen in as-grown crystals also gave a reduced oscillatory-profile, but a large number of oxygen precipitates produced by thermal annealing caused little reduction of subsidiary peaks.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 365-367 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried GaAs/AlGaAs single quantum-well structures have been fabricated for the first time by in situ electron beam (EB) lithography. The process includes the molecular beam epitaxy of a GaAs/AlGaAs single quantum well, electron-beam direct writing, Cl2 gas etching, and overgrowth of an AlGaAs layer. A thin GaAs oxide layer was used as the etching mask, which was selectively formed on a clean GaAs surface by EB irradiation under an O2 ambient. Subsequent Cl2 gas etching resulted in the formation of isolated quantum wells. Prior to the overgrowth, thermal cleaning with atomic hydrogen was employed for removing the oxide mask. The cathodoluminescence image of the buried quantum well demonstrates the high quality of the resultant structure formed by in situ EB lithography.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 177-179 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray topography using extremely asymmetric diffraction under the specular reflection condition is effective for imaging a short-range strain field near the surface. This experimental condition is easily realized by utilizing the tunability of synchrotron radiation. The surface defect images are clearly observed as a result of the reduction of background due to dynamical diffraction from the highly perfect bulk crystal.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2980-2982 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A newly developed imaging-plate plane-wave x-ray topography (IPPWT) method has been successfully applied to the quantitative analysis of local lattice distortion due to growth striations in magnetic-field-applied Czochralski silicon single crystals. IPPWT was found to possess sufficient spatial resolution to accurately measure variations of growth-induced local lattice distortions (Δd/d and Δα). The advantageous features of IPPWT, in comparison with conventional photographic-plate plane-wave x-ray topography, are a wide latitude in x-ray exposure conditions, better x-ray intensity linearity for performing quantitative analysis, and convenience in image processing and data handling.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The time-resolved x-ray measurement system using the TAC technique and the MCS technique has been improved after the previous SRI conference. The improved TAC technique enables us to measure a time-resolved x-ray diffraction intensity distribution across a laser spot at any time after laser flashing with a time resolution of 25 ns under the multibunch operation of synchrotron radiation sources. Optical fiber delay units are developed for the MCS technique instead of ECL delay units to obtain long delay time for detective signals.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1967-1969 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method of determining the elastic constants, density, and thickness of thin-film materials with the line-focus-beam acoustic microscope is developed using propagation characteristics of leaky Sezawa and pseudo-Sezawa waves in the neighborhood of the cut-off region. It is demonstrated for a sample of gold film on fused quartz that the values of the stiffness constant, C44, and density are, respectively, about 11% and 5.5% less than those for polycrystalline bulk gold, and the thickness is determined as 6370 A(ring).
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...