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  • 1
    Electronic Resource
    Electronic Resource
    Observation and prediction of first phase formation in binary Cu-metal thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2810-2816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First phase formation has been determined in Cu binary thin film systems with Ti, Zr, Mg, Sb, Pd, and Pt using transmission electron microscopy and Rutherford backscattering spectrometry. CuTi, CuZr, CuMg2, Cu2Sb, Cu3Pd, and Cu3Pt are the first phases to form upon annealing the Cu/metal bilayers. The effective heat of formation model is used to predict first phase formation in 14 Cu/metal systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351533
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation and protection in copper and copper alloy thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2820-2827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation kinetics of copper thin films have been studied at temperatures below 200 °C in air. The protection of copper from oxidation can be achieved by alloying copper film with Ti, Pd, Cr, or Al. The influence of the composition and microstructure to the oxidation rate has been studied. The compounds Cu3Ti, Cu3Pd, and CuAl2 are stable in the oxidation ambient. The formation of Cr-oxide, which is a passive oxide, explains the inhibition of oxidation on Cu-Cr films. Compared with the crystalline phase, the amorphous Cu65Ti35 alloy film is more oxidation resistant. A TiN layer with oxygen incorporated is more effective in preventing copper oxidation than a TiN layer without oxygen incorporated. A passivating Si3N4 layer on copper thin films can prevent copper oxidation effectively at 350 °C in oxygen ambient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349344
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  • 3
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of stressed and stress-relaxed Ge-Si alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1768-1773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxy of 3500-A(ring)-thick GexSi1−x (0.04≤x≤0.12) films on (100) Si substrates has been investigated. The thickness of regrown layers increased linearly with annealing time in the temperature range of 475–575 °C. The regrowth rates of stressed alloys were less than those of pure Si, while stress-relaxed alloys have larger rates than Si. The difference in regrowth rates was explained by the activation-strain tensor model (Aziz, Sabin, and Lu, to be published in Phys. Rev. B). The first element of the activation-strain tensor obtained in this experiment was in excellent agreement with that deduced by Aziz et al. For low Ge concentrations (x〈0.08), the recrystallized region was of good crystalline quality. However, threading dislocations were observed in a stressed Ge0.1Si0.9 alloy after complete recrystallization. During the regrowth at 550 °C, the Ge-Si alloy first regrew coherently up to 300 A(ring), above which threading dislocations started to nucleate. On the other hand, no dislocations were detected in the regrown layer of a stress-relaxed Ge0.1Si0.9 alloy sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351212
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  • 4
    Electronic Resource
    Electronic Resource
    Limitations on the critical current density in Bi2Sr2CaCu2O8 films grown on MgO(001) by metalorganic deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2356-2362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study has been carried out in order to elucidate the mechanisms for low critical current densities in superconducting oxide films prepared by metalorganic deposition. Bi2Sr2CaCu2O8 films grown on MgO(001) have stoichiometric composition and exhibit limited interfacial reaction with the underlying substrates. The films have a low content of carbon and the grain boundaries are mostly clean. Rocking curve analysis shows a narrow peak, while pole figure measurements indicate a strong mosaic pattern. The films exhibit a low critical current density and the magnetic susceptibility versus temperature has a high field dependence. A substantial increase in critical current densities can be achieved when the orientations of Bi2Sr2CaCu2O8 crystallites in the a-b plane are improved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351089
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  • 5
    Electronic Resource
    Electronic Resource
    Oxidation and reduction of copper oxide thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1020-1029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have employed 16O(α,α)16O oxygen resonance measurement and transmission electron microscopy to study the oxidation and reduction of copper oxide thin films. The in- and out-diffusion of oxygen-induced oxygen concentration variations and microstructural changes in the films were monitored. The study of reduction was carried out by annealing CuO and Cu4O3 thin films in vacuum. Dark-field microscopic images show that isolated and large Cu2O grains emerge from the small CuO and Cu4O3 grain matrices. The growth of Cu2O grains in both CuO and Cu4O3 matrices has been measured to be linear with time, and have activation energies 1.1 and 0.7 eV, respectively. The main controlling mechanism to the discontinuous morphology of the Cu2O grain growth is the migration of the phase boundaries between the oxides induced by oxygen out-diffusion along the moving boundary. An oxygen in-diffusion study was performed by annealing Cu2O and Cu4O3 in an oxygen ambient. The CuO phase nucleates randomly and rapidly in both Cu2O and Cu4O3 matrices. The small grain growth rate of CuO suggests that nucleation rather than grain growth is the predominant event during oxidation. The kinetics study of the reduction and oxidation of copper oxides shows that the two processes are asymmetrical and the latter is faster.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347417
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  • 6
    Electronic Resource
    Electronic Resource
    Kinetic description of the transition from a one-phase to a two-phase growth regime in Al/Pd lateral diffusion couples (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3259-3267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of the solid-state reaction between Al and Pd is studied in the geometry of a lateral Al-Pd diffusion couple in the temperature range between 250 and 430 °C. The first reaction phase is the crystalline Al3Pd2(δ) phase. After the growth of Al3Pd2 reaches a critical length, the quasicrystalline decagonal Al3Pd(γ') phase starts to grow in between the Al and the Al3Pd2 phases, and the Al3Pd2 and Al3Pd phase continue to grow simultaneously. We have fitted this simultaneous growth with a recently proposed model of kinetic suppression on the basis of interfacial reaction barriers. Excellent agreement between the data and the model is found. From the analysis the effective interface growth constant for the Al3Pd is extracted as a function of temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346377
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  • 7
    Electronic Resource
    Electronic Resource
    In situ observation of fractal growth during a-Si crystallization in a Cu3Si matrix (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5153-5155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe that the crystallization of amorphous Si thin films in contact with a copper silicide layer occurs at a temperature of around 485 °C in the form of dendrites with a fractal dimension of 1.7. The in situ observation of both the silicidation reaction, forming Cu3Si, and the subsequent crystallization of the remaining amorphous silicon in the silicide matrix, were observed during annealing in a transmission electron microscope. We estimate the radial growth rate of these crystallites at 5 nm/s at this temperature. The fractal dimension of the dendrites indicates a growth process similar to one known as diffusion-limited aggregation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348995
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  • 8
    Electronic Resource
    Electronic Resource
    Solutions to current crowding in circular vias for contact resistance measurements (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 253-258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of current crowding near circular contacts has been analyzed. We analyze a simple system of two parallel plates connected by a cylindrical plug. Under a given set of assumptions the problem can be reduced from three-dimensional to one-dimensional geometry. Given this assumption, analytic solutions are obtained for the current and voltage distributions within the plug. From these expressions the correct values for contact resistivity (Pc) are derived. Finally, the analytical expressions are compared with the results from two-dimensional numerical calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350320
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  • 9
    Electronic Resource
    Electronic Resource
    Interactions of Cu with CoSi2, CrSi2 and TiSi2 with and without TiNx barrier layers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6207-6212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interactions of Cu with CoSi2, CrSi2, and TiSi2 with and without interposed TiNx layers have been studied using Rutherford backscattering spectrometry, Auger electron spectrometry, x-ray diffraction, and in situ sheet resistivity measurements. Cu diffuses through a preformed CoSi2 layer to form the structure CoSi2/Cu3Si/Si(100). No dissociation of CoSi2 has been observed. For the Cu/CrSi2/Si system, the outdiffusion of Si leads to the formation of Cu3Si/CrSi2/Si at temperatures above 300 °C. At about the same temperature, Cu diffuses into a TiSi2 layer and to the TiSi2/Si interface to react with both Ti and Si forming Cu3Ti, Cu3Si, and Cu4Si phases. A 50-nm TiNx layer prepared by reactive sputtering was observed to be an effective diffusion barrier between Cu and CoSi2 or CrSi2. A 30-nm layer of TiNx simultaneously grown with TiSi2 by rapid thermal annealing proved effective between Cu and TiSi2 up to 500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346912
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  • 10
    Electronic Resource
    Electronic Resource
    Precipitation and relaxation in strained Si1−yCy/Si heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3656-3668 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers. The loss of substitutional C was monitored over a temperature range of 810–925 °C using Fourier transform infrared absorbance spectroscopy. Concurrent strain measurements were performed using rocking curve x-ray diffraction to correlate strain relaxation with the loss of substitutional C from the lattice. Loss of C from the lattice was initiated immediately without an incubation period, indicative of a low barrier to C clustering. The activation energy as calculated from a time to 50% completion analysis (3.3±5 eV) is near the activation energy for the diffusion of C in Si. Over the entire temperature range studied, annealing to complete loss of substitutional C resulted in the precipitation of C into β-SiC. The precipitates are nearly spherical with diameters of 2–4 nm. These precipitates have the same crystallographic orientation as the Si matrix but the interfaces between the Si and β-SiC precipitates are incoherent. During the initial stages of precipitation, however, C-rich clusters form which maintain coherency with the Si matrix so the biaxial strain in the heterostructure is partially retained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357429
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