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  • 1990-1994  (1)
  • 1975-1979  (1)
  • 1955-1959
  • 61.80  (1)
  • ELISA  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Phosphoramidon enhances allatostatin-mediated inhibition of juvenile hormone biosynthesis in the corpora allta of the cockroach,Diploptera punctata (1992)
    Springer
    Cellular and molecular life sciences 48 (1992), S. 758-761 
    Details
    ISSN: 1420-9071
    Keywords: Corpora allata ; juvenile hormone biosynthesis ; allatostatins ; phosphoramidon ; enkephalinase ; cockroach ; Diploptera punctata ; ELISA
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Use of the enkephalinase inhibitor phosphoramidon in the in vitro radiochemical assay for juvenile hormone biosynthesis enhanced allatostatin-mediated inhibition of hormone production by corpora allata of the cockroach,Diploptera punctata. Significant increases in inhibition in day 2 virgin female CA by AST 1 (at 10−7 M) and AST 4 (10−8–10−7 M) were observed in the presence of phosphoramidon (10−5M or greater). No significant increases in inhibition were seen in CA from day 6 mated females with AST 4 (10−9–10−7M) and phosphoramidon combined. Phosphoramidon alone had no effect on JH biosynthesis. Analysis of allatostatin content of the CA, as determined by ELISA, revealed that addition of phosphoramidon to the medium increased the endogenous allatostatin conten in CA of virgin and mated females. The similarity in primary structure between allatostatins and enkephalin-like peptides and their similar distribution makes it probable that phosphoramidon acts by preventing breakdown of allatostatins within the CA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02124297
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Disorders produced during high-current and high-dose phosphorus ion implantation in silicon (1979)
    Springer
    Applied physics 20 (1979), S. 225-229 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×1016ions/cm2) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886022
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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