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  • 66.30.Jt  (1)
  • PACS: 36.40.Cg, 61.46.+w, 76.30.Rn, 82.80.Bg  (1)
  • PACS: 61.70.Tm; 79.20.Nc; 66.30.Jt  (1)
Materialart
Erscheinungszeitraum
Schlagwörter
  • 1
    ISSN: 1432-0630
    Schlagwort(e): PACS: 61.70.Tm; 79.20.Nc; 66.30.Jt
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract.  Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the 15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    ISSN: 1432-0630
    Schlagwort(e): 61.70.Tm ; 79.20.Nc ; 66.30.Jt
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 66 (1998), S. 287-292 
    ISSN: 1432-0630
    Schlagwort(e): PACS: 36.40.Cg, 61.46.+w, 76.30.Rn, 82.80.Bg
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: 60 (atomic nitrogen inside C60) is produced by ion implantation. Two different production methods are employed: Kaufman ion source and glow discharge. After the bombarded material is dissolved in toluene or CS2 and is filtered, several milligrams of C60 containing N@C60 in a concentration of 10-4 to 10-5 are obtained. N@C60 gives a very clear hyperfine-split electron paramagnetic resonance signal. The most prominent features of N@C60 are: (i) Nitrogen in C60 keeps its atomic electronic configuration and occupies the on-center position. (ii) N@C60 is stable at ambient conditions, the thermal instability starts at 260 °C. (iii) The complex survives exohedral addition reactions and is a sensitive detector of cage distortions caused by addends. (iv) C60 and N@C60 exhibit slightly different retention times in column chromatography, thus permitting an enrichment of N@C60 by this method.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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