ISSN:
1432-0630
Keywords:
68.55Jh
;
81.30Fb
;
68.35
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Films of GaAs, heavily doped with Sn, which have been grown by molecular-beam epitaxy are found to contain single-crystal Sn particles situated in the nearsurface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00626415
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