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  • 1
    Electronic Resource
    Electronic Resource
    Defect-level analysis of semiconductors by a new differential evaluation ofn(1/T)-characteristics (1979)
    Springer
    Applied physics 19 (1979), S. 307-312 
    Details
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new method for the defect-level analysis of extrinsic semiconductors is described. Provided that the defect-level concentration is not too large and the temperature is not too low, the Fermi levelE F is shifted with increasing temperature from a position near the conduction (or valence) band towards the middle of the forbidden gap monotonously. Thus majority carriers are emitted into the conduction (or valence) band from the defect levels successively. If for a small increment of the temperature the Fermi levelE F is shifted by ΔE F and the concentration of free majority carriers is increased by Δn, then the ratio Δn/ΔE F is a measure of the defect-level concentration within ΔE F . Furthermore we discuss how this analysis is influenced by additional defect levels outside the range over which the Fermi energy can be shifted by variation of the temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900474
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  • 2
    Electronic Resource
    Electronic Resource
    A new model for the explanation of the saturation buildup in the transverse HGMS-configuration (1983)
    Springer
    Applied physics 32 (1983), S. 79-85 
    Details
    ISSN: 1432-0630
    Keywords: 85.70 ; 41
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A model for the description of saturation buildup curves on single-capture elements is presented. It avoids the principal difficulties connected with the so-called SEB model in the case of the transverse HGMS-geometry. The basic idea of this model consists of the “linking” of the normal and tangential components of the forces acting at the buildup surface by a force of static friction. In contrast to the SEB-model the fact that the saturation buildup surface is neither circular nor concentric with the cross section of the capture element is taken into account. After evaluating two sets of experimental data and calculating the coefficient of static frictionf the “model of static friction” is submitted to a first examination. Within the accuracy of these preliminary measurements and even with an approximate evaluation of the fluid drag force the usefulness of the proposed method is established.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617832
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ordered HGMS filters in the transverse configuration (1987)
    Springer
    Applied physics 44 (1987), S. 161-166 
    Details
    ISSN: 1432-0630
    Keywords: 85.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A numerical solution for the Navier-Stokes equation is obtained for the flow conditions in an ordered high-gradient magnetic filter. Hence, capture efficiencies are calculated for this filter operated in the transverse configuration, with field, flow, and collector-wire axis mutually perpendicular. Good agreement with experiment is obtained over a wide range of filter parameters. Comparisons are made with results obtained by other models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626418
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  • 4
    Electronic Resource
    Electronic Resource
    Trajectories of para- and freeomagnetic particles in HGMS filters with axial configurations (1981)
    Springer
    Applied physics 24 (1981), S. 229-232 
    Details
    ISSN: 1432-0630
    Keywords: 51 ; 84
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The trajectories of para-and ferromagnetic particles with velocities between 0.04 and 2.5 cm s−1 have been investigated in an HGMS model system with axial configuration. A single-wire system has been observed by a TV system. The trajectories were compared with the ideal (inviscid flow) and laminar (viscous flow) model. The results agree with laminar flow model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899762
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  • 5
    Electronic Resource
    Electronic Resource
    On the density of localized levels in amorphous silicon (1979)
    Springer
    Applied physics 18 (1979), S. 427-429 
    Details
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The distribution of the localized levelsg(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum ofg(ε) is verified by this method to be in the order of 1017 to 1018 cm−3eV−1, whereas the maxima ofg(ε), which have been reported in the literature, are not confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899699
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Particle accumulation on a single wire in transverse HGMS configuration (1987)
    Springer
    Applied physics 42 (1987), S. 117-124 
    Details
    ISSN: 1432-0630
    Keywords: 85.70 ; 41
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An experimental investigation of particle accumulation on a single wire in the transverse HGMS configuration is presented. For saturation buildup we obtain a monotonic decrease of the coefficient of static frictionf sat with the flow velocityv a on the basis of the “friction model”. The power law of the dependence of the saturation accumulation area onv a , predicted by this model, is experimentally verified. Furthermore, we present an empirical law describing the dependence of the accumulation area on timeτ and on flow velocityv a for the entire buildup process. From the investigation of the initial accumulation we conclude that existing theories of the so-called capture radius do not satisfactorily describe the situation near the end of a capture wire.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616720
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Critical capture radius in single wire HGMS (1981)
    Springer
    Applied physics 24 (1981), S. 225-228 
    Details
    ISSN: 1432-0630
    Keywords: 51 ; 84
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The observation of a large number of particle trajectories in a transversi single wire HGMS has made possible the experimental determination of the critical capture radius. Both the trajectories and the capture radius were found to be in good agreement with calculated values obtained by numerical means using a laminar flow model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899761
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of localized level energies by a statistics of the fermi-level (1977)
    Springer
    Applied physics 12 (1977), S. 379-381 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886040
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    Paper (German National Licenses)
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