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  • 1
    Electronic Resource
    Electronic Resource
    Differential evaluation of the Hall effect in silicon with oxygen-related donors (1984)
    Springer
    Applied physics 33 (1984), S. 47-50 
    Details
    ISSN: 1432-0630
    Keywords: 71.55.Fr ; 72.80.Cw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The free-electron concentration as a function of the temperature is analyzed differentially for silicon with oxygen-related donors formed by annealing at 430 °C. The analysis yields defect levels atE c−0.25 eV,E c−0.14eV, andE c−0.055 eV assuming the degeneracy factors to be unity. The corresponding defect level concentrations are approximately proportional to the annealing time. Their formation rates are between 1 and 3×1010cm−3s−1 at 430 °C annealing temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197085
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Charge carrier statistics of semiconductors containing defects with negative electronic correlation energy (1982)
    Springer
    Applied physics 27 (1982), S. 39-47 
    Details
    ISSN: 1432-0630
    Keywords: 71.55.Fr ; 72.80.Cw ; 71.45.Gm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The free charge carrier concentration as a function of the reciprocal temperature and the doping level [p(1/T)- andp(C)-characteristics] is calculated from the neutrality equation of a semiconductor containing positive or negativeU centers. The typical exponential laws and power laws of thep(1/T)- andp(C)-characteristics are given both for positive and negative correlation energy of the bound charge carrier pairs. Furthermore, the characteristics are evaluated differentially, in order to obtain criteria for the presence of negativeU centers in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197545
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Determination of localized level energies by a statistics of the fermi-level (1977)
    Springer
    Applied physics 12 (1977), S. 379-381 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886040
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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