ISSN:
1432-0630
Keywords:
73.40.Qv
;
73.60.Fw
;
86.60.Pg
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract One of the disadvantages of applying an a-Si:H thin-film transistor (TFT) to an active matrix-addressed liquid crystal (LC) panel is that a TFT with an a-Si:H has a very large photo-leakage current because of the high photo-conductivity of an a-Si:H itself. We have tried decreasing the photo-leakage current by varying the thickness of an a-Si:H layer (L) in TFTs and investigated the characteristics of TFTs, mainly drain voltage versus drain current containing photo-leakage current (I ph). As a result, it is shown that lnI ph is proportional to InL, and its gradient is 1.5–2.0. We assume that the thinner an a-Si:H layer is, the more effective the recombination of carriers at the interface states is forI ph. We have applied TFT with a very thin a-Si:H layer (∼30nm) to a full-color active matrix-addressed LC panel for a moving picture display and realized a display of good quality under illuminated condition of 5×104lx without a shading layer in it.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616054
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