ISSN:
1432-0630
Keywords:
78.70.Bj
;
72.80.Ey
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The positron lifetime of undoped Liquid-Encapsulated Czochralski (LEC)-GaAs and Si-doped (1.3×1018 cm−3) LEC-GaAs was measured before and after irradiation with protons (dose 1×1015/cm2, 15 MeV). In Si-doped GaAs, the decrease of positron lifetime at temperatures between 10 and 300 K are due to the decrease of the positron-diffusion length and the increase of the effective shallow traps such as antisite GaAs. The annealing stage of the proton-irradiation-induced defects which show the different behavior from that of electron-irradiation-induced defects suggests that proton irradiation creates more complicated defect complexes, containing vacancies rather than isolated vacancy-type defects or simple complexes which have been observed during electron-irradiation processes. Above 700 K, proton-irradiation-induced defects such as vacancy-type defects and simple vacancy complexes are almost annealed out, while Si-induced defects such as SiGa-VGa complexes cannot be annealed out above 973 K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01577613
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