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Digitale Medien

Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples (1978)

Foti, G. ; Rimini, E. ; Tseng, W. S. ; [weitere]

Springer

Applied physics 15 (1978), S. 365-369

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Details

ISSN: 1432-0630

Schlagwort(e): 79.20

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Channeling effect techniques with a 2.0 MeV He+ Rutherford backscattering and transmission electron microscopy were used to characterize the crystallized layers after Q-switched ruby laser irradiation of 4000 Å thick amorphous layer on 〈100〉 and 〈111〉 underlined crystal substrates. At a laser energy density of 2.5 J/cm2 the crystal layer on the 〈111〉 specimen contains a large density of stacking-faults, that on 〈100〉 specimen contains a very small amount of screw dislocation lines. High quality single-crystal layers have been obtained after irradiation at 3.5 J/cm2. From a comparison with the growth rate and defect structure observed in thermally annealed implanted-amorphous layers, we propose that crystal growth by 50 ns pulse laser annealing occurs by melting the amorphous layer.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00886154

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