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  • 81.15  (2)
  • 8115  (1)
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  • 1
    ISSN: 1432-0630
    Schlagwort(e): 7360H ; 7960 ; 8115 ; 8120S
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Polymeric styrene films with thicknesses ranging from about one nm up to a few μm have been deposited by means of a direct ion beam deposition (IBD) technique. The deposition energy, which can be chosen independently of the parameters which govern the plasma conditions, has been varied between few eV and 1000 eV. The correlation between the deposition parameters and the resulting film properties in terms of the electronic structure is discussed. The in situ characterization by electron spectroscopy has proved to be a very useful characterization method and ultraviolet photoelectron spectroscopy in particular revealed an extremely high sensitivity to structural differences in the deposited films. The polymeric films have also been characterized by scanning electron microscopy and optical spectroscopy. These techniques have also served to compare films prepared by the direct IBD technique with films obtained by standard rf plasma polymerization (RFPP) in a tubular reactor. Significant differences have been found which are dependent on the deposition parameters; these are discussed in detail.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 549-558 
    ISSN: 1432-0630
    Schlagwort(e): 79.60 ; 73.40 ; 73.60 ; 73.60H ; 71.25M ; 81.15 ; 46.30P
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 559-566 
    ISSN: 1432-0630
    Schlagwort(e): 73.40 ; 73.60H ; 68.35P ; 45.30P ; 81.15
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The adhesion quality of amorphous hydrogenated carbon films (a-C:H) on semiconductor substrates depends to a large degree on the properties of the interface. The present work complements the photoemission results of the preceding paper with a detailed investigation of the atomic structure of the a-C:H/Si and a-C:H/GaAs interfaces. We show that the method of substrate cleaning and the deposition parameters affect the thickness of the interfacial layer and the interface roughness. The carbide compounds that form in the interfacial layer are found to be amorphous and we present evidence for the precipitation of metallic Ga at the a-C:H/GaAs interface. Finally, we have determined the extent of atomic intermixing in the interfacial region and compare our results with different mechanisms of adhesion.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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