ISSN:
1432-0630
Keywords:
78.20
;
61.80
;
81.40
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of the implantation conditions of ion dose and energy and of thermal annealing conditions, through the determination of the material thermal conductivity and optical absorption coefficient. It was found that the technique can discriminate between amorphous material obtained under different implantation conditions. Regarding the annealed samples, different results have been obtained for amorphous as-implanted, fine grain polycrystalline, highly defective single crystalline and defect-free single crystalline materials.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616300
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