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The characteristics of high current amorphous silicon diodes (1980)

Gibson, R. A. ; Comber, P. G. ; Spear, W. E.

Springer

Applied physics 21 (1980), S. 307-311

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ISSN: 1432-0630

Keywords: 61.40 ; 84.60

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Amorphous siliconp−n junctions with various doping profiles have been prepared by the glow discharge technique and the effect of the barrier profile on electrical properties investigated. Current densities of up to 40 A cm−2 with rectification ratios of 104–105 were obtained withn +−ν−p + structures. The diode quality factor has also been investigated, both in the dark and under illumination.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00895919

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