ISSN:
1432-0630
Keywords:
86.30
;
72.40
;
73.60
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We have made theoretical studies on the trapping and recombination of photogenerated carriers in hydrogenated amorphous silicon (a-Si∶H) p-i-n solar cells. We discuss in detail the following points: 1) The limitations of the assumptions in the previous analysis. It has been clarified that the single-level Shockley-Read-Hall model for carrier recombination and the treatment of trap occupation in terms of quasi-Fermi levels are inadequate for exact analysis. 2) The superlinear dependence of carrier recombination rate on the free-carrier density which can explain the enhancement of photo-induced changes ina-Si∶H under high intensity light. 3) The estimation of capture cross section of the tail states ina-Si∶H. We show that the charged and neutral tail states have rather small capture cross sections of less than 10−16 cm2 and of less than 10−19 cm2, respectively. 4) The effect of the recombination of photogenerated (PG) carriers at the p/i and the n/i interfaces. We estimate the recombination velocityS of PG carriers at these interfaces to be about 103 cm/s. It has been also clarified that the decrease inS is effective to improve the cell performance, especially the open circuit voltage.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617500
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