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  • 1
    Electronic Resource
    Electronic Resource
    Rotational isomerism inbis carbene MOL4 complexes: A theoretical study (1984)
    Springer
    Theoretical chemistry accounts 64 (1984), S. 461-467 
    Details
    ISSN: 1432-2234
    Keywords: Carbene rotational barriers ; Isolobal analogy ; Ab-initio SCF calculations
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract LCAO-MO-SCF calculations are reported for the different stereoisomers of the Mo(CO)4(CH2)2 and Mo(CO)4[C(NH2)2]2 systems. The substitution of the hydrogen atoms by the amino groups in the carbene ligands leads to an almost zero rotational barrier. Steric interactions are therefore expected to govern the barrier for diaminocarbene ligands which are more bulky than C(NH2)2. The rotational isomerism in thesebis carbene MoL4 systems is also discussed in connection with the isolobal analogy between CH2 and C2H4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02399238
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Rotational isomerism inbis carbene MOL4 complexes: A theoretical study (1984)
    Springer
    Theoretical chemistry accounts 64 (1984), S. 461-467 
    Details
    ISSN: 1432-2234
    Keywords: Carbene rotational barriers ; Isolobal analogy ; Ab-initio SCF calculations
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract LCAO-MO-SCF calculations are reported for the different stereoisomers of the Mo(CO)4(CH2)2 and Mo(CO)4[C(NH2)2]2 systems. The substitution of the hydrogen atoms by the amino groups in the carbene ligands leads to an almost zero rotational barrier. Steric interactions are therefore expected to govern the barrier for diaminocarbene ligands which are more bulky than C(NH2)2. The rotational isomerism in thesebis carbene MoL4 systems is also discussed in connection with the isolobal analogy between CH2 and C2H4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00554231
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Measurement of the thermal conductivity of molten InSb under microgravity (1991)
    Springer
    International journal of thermophysics 12 (1991), S. 783-790 
    Details
    ISSN: 1572-9567
    Keywords: InSb ; microgravity ; molten InSb ; thermal conductivity ; transient hot-wire method ; space experiment
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Thermal conductivity of molten InSb was measured on board the TEXUS-24 sounding rocket by the transient hot-wire method using the originally designed thermal conductivity measurement facility (TCMF). Measurements made through this facility were affected by natural convection on the ground. This natural convection was confirmed to be sufficiently suppressed during a microgravity environment. The thermal conductivity of molten InSb was 15.8 and 18.2 W·m−1·K−1 at 830 and 890 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00502405
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Thermophysical properties data on molten semiconductors (1992)
    Springer
    International journal of thermophysics 13 (1992), S. 1061-1084 
    Details
    ISSN: 1572-9567
    Keywords: density ; GaAs ; GaSb ; Ge ; high temperature ; InP ; InSb ; molten state ; semiconductors ; Si ; surface tension ; thermal conductivity ; viscosity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01141216
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Measurement of the thermal conductivity of molten semiconductors (1988)
    Springer
    International journal of thermophysics 9 (1988), S. 933-940 
    Details
    ISSN: 1572-9567
    Keywords: alumina ; high temperature ; InSb ; thermal conductivity ; transient hot-wire method
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The thermal conductivity of molten InSb in the temperature range between 800 and 870 K was measured by the transient hot-wire method using a ceramic probe. The probe was fabricated from a tungsten wire printed on an alumina substrate and coated with a thin alumina layer. The thermal conductivity was found to be about 18 W· m−·K−at the melting point and increased moderately with increasing temperature. The thermal conductivity of alumina used as the substrate for the probe was also measured in the same temperature range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01133261
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    Paper (German National Licenses)
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