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  • Articles: DFG German National Licenses  (2)
  • 1995-1999  (1)
  • 1975-1979  (1)
  • 1965-1969
  • 61.70  (1)
  • Key words Telomerase  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Positive telomerase activity in the majority of bile duct carcinoma (1999)
    Springer
    International journal of clinical oncology 4 (1999), S. 338-342 
    Details
    ISSN: 1437-7772
    Keywords: Key words Telomerase ; Bile duct carcinoma ; Malignancy grade
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Background. Studies of human tumors and human tumor cell lines indicate that telomerase activity may play a critical role in the tumor cell growth by sustaining cellular immortality. Telomerase activity has been detected in different percentages in various carcinomas, but the incidence of positive telomerase activity in bile duct carcinomas and surrounding normal bile duct tissues in its relation with malignancy grades of tumors, depth of invasion, lymphatic and vascular invasion, and lymph node metastases has not been studied. Methods. Telomerase activity was assayed in surgically resected specimens of seven human bile duct carcinomas and seven adjacent nonneoplastic tissues using the PCR-based Oncor TRAP (a telomeric repeat amplification protocol)-eze telomerase detection kit. The correlation between the results of telomerase activity and clinicopathological data was examined. Results. The telomerase activity was detected in six of seven (86%) bile duct carcinoma cases with only one negative case in our series, whereas no telomerase activity was detected in nonneoplastic adjacent bile duct tissues. Although the number of cases in our study was small, telomerase activity was regarded as independent of tumor grade, depth of invasion, lymphatic and intravascular invasion, or lymph node metastasis. Conclusions. These results indicate that increased telomerase activity is a common phenomenon in the majority of bile duct carcinomas, and that it is negative in nonneoplastic bile duct tissues.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s101470050081
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Disorders produced during high-current and high-dose phosphorus ion implantation in silicon (1979)
    Springer
    Applied physics 20 (1979), S. 225-229 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×1016ions/cm2) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886022
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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