ISSN:
1434-6036
Keywords:
PACS. 61.14.Hg Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED) - 68.35.Bs Surface structure and topography
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract: Clean, ordered, and stoichiometric GaN surfaces are obtained after exposure to a Ga-flux followed by annealing in ultrahigh vacuum (UHV), after desorption of a Ga layer deposited at room-temperature or after nitrogen ion-bombardment and annealing in UHV. Samples annealed at temperatures above approximately display low-energy electron diffraction patterns. As a function of electron energy, the normal-order spots split into circular sextets. These multiplet rings periodically expand and coalesce. This observation is explained by oppositely oriented, regular step arrays in the [1000]-, [0100]- and [0010]-directions on the GaN surfaces. Quantitative analysis of the data gives terrace widths of Å and step heights of Å. The observations suggest faceting or the “development” of growth spirals with steps heights of two Ga-N bilayers by thermal etching.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s100510050583
Permalink
