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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6677-6679 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A double layer Cr film structure has been prepared by sputter depositing Cr on single crystal Si substrates first without substrate bias and then with various substrate bias voltages. Without substrate bias, Cr{200} texture grows on Si at room temperature; thus the first Cr layer acts like a seed Cr layer with the {200} texture, and the second Cr layer, prepared with substrate bias, tends to replicate the {200} texture epitaxially. CoCrTa and CoNiCr films prepared on these double Cr underlayers, therefore, tend to have a {112¯0} texture with their c-axes oriented in the plane of the film. At the same time, the bias sputtering of the second Cr layer increases the coercivity of the subsequently deposited magnetic films significantly. Comparison studies of δM curves show that the use of the double Cr underlayers reduces the intergranular exchange interactions. The films prepared on the Si substrates have been compared with the films prepared on canasite and glass substrates. It has also been found that the magnetic properties are similar for films on canasite and on glass.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoCrTa/Cr thin films were prepared by rf diode sputtering onto canasite and glass substrates at various bias voltages from two targets of different compositions (Co82.8Cr14.6Ta2.6 and Co86Cr12Ta2). While Auger depth profile analysis indicates that there is some broadening at the CoCrTa-Cr interface, x-ray fluorescence spectroscopy reveals that changes in alloy composition due to the resputtering processes are even more prominent. For both targets, as the substrate bias increases the Co content in the films declines, and the magnetization decreases. The maximum film coercivity appears to correlate to the final film composition. By investigating the results from both targets, it is concluded that the coercivity reaches a maximum when the film composition is in the neighborhood of Co84Cr13Ta3. Thus, to optimize the coercivity different bias voltages are required for each target. Excessive substrate bias, however, leads to films with low magnetization and coercivity.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 4632-4640 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have determined by neutron reflectivity the volume fraction profile, φ(z) of poly(dimethylsiloxane) chains in toluene adsorbed at the free surface of the solution. φ(z) is found to vary as (a/z)4/3 conforming to scaling laws proposed by de Gennes. The extension of the profile is of the order of the radius of gyration. To arrive at these results, the use of two different isotopic compositions and the simultaneous analysis of results obtained with various polymer chain lengths and concentrations are necessary. The validity of several models has been tested. With a few realistic hypotheses compatible with already existing experimental data, it appears that only the self-similar profile is acceptable for the system studied.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 7893-7900 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The NO γ emission is observed from the reaction of NO+(a)+NO. The emission provides a new detection method for studying the NO+(a) reaction kinetics at thermal energy without electric field. The NO+(a) is produced by photoionization of NO at 76.5 nm as well as by the reaction of Ar++NO, where Ar+ is also produced by photoionization of Ar. The vibrational population distributions of NO(A) resulted from the ion–molecule reactions are measured and used to discuss the mechanisms for the production of the emission. The reaction rate constants are determined from the decay rates of the emission intensity as a function of time. The reaction rate constants of NO+(a)+NO and Ar++NO at room temperature are measured to be (5.8±0.7)×10−10 and (2.1±1.0)×10−10 cm3/s, respectively. The reaction rate constant of NO+(a)+Ar at thermal energy is estimated to be about 10−12 cm3/s.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 133-139 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photoabsorption and fluorescence cross sections of CF3H, CF3Cl, and CF3Br are measured in the 50–106 nm region using synchrotron radiation. Fluorescence spectra from photoexcitation of these molecules are dispersed to identify the emitting species to be mainly the excited CF@B|2, CF*3, and CF3X+*, but not CF+@B|3. The fluorescence excitation function of CF3X (X=F, H, Cl, or Br) is generally divided into three excitation bands; each band produces a specific excited species. The fluorescence yields of the studied molecules are determined and correlated with dissociation thresholds and ionization potentials. The excited ion states that may emit are discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 706-713 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Classical models of magnetic reconnection consist of a small diffusion region, which is bounded by two pairs of slow shocks. In these models, the plasma is accelerated across the shocks. It has long been postulated that violation of symmetry across the current sheet will lead to the formation of intermediate waves in the current sheet. These asymmetries are important properties of space plasma current sheets. Equally important in space plasmas is the presence of sheared flow across current sheets. In this study, the structure of steady-state reconnection is investigated in the presence of a shear flow across the current sheet with symmetric density and magnetic field strengths using two-dimensional magnetohydrodynamic (MHD) simulations. The results show that for sheared flow above the Alfvén velocity of the inflow regions no steady-state magnetic reconnection occurs. For sheared plasma flow below this critical velocity steady-state reconnection is obtained. A detailed examination of the Rankine–Hugoniot jump conditions reveals that each pair of slow shocks is replaced by a strong intermediate shock and a weak slow shock in the presence of shear flow.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 4759-4765 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The surfactant film bending elasticity can be described by a spontaneous curvature C0 and two elastic constants K and K¯ associated with the mean curvature and the Gaussian curvature, respectively. These parameters are very important in the determination of the structure of the dispersions stabilized by the surfactant (droplets or sponge-like structures). We have studied ternary mixtures of oil, water, and nonionic surfactants of different chain lengths. Depending on the temperature, the microemulsions are in equilibrium with excess oil (o/w structure), excess water (w/o), or both excess oil and water (bicontinuous). We present neutron scattering data from which we determine the microemulsion structure and, in the case of droplet structures, of the droplet polydispersity. These results, in combination with those from earlier experiments using ellipsometry, are used to estimate K¯.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1681-1683 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconducting arrays of Josephson junctions have been fabricated and tested as millimeter-wave oscillators at 77 K. Power levels in the microwatt range have been detected in the range of 90–160 GHz from arrays using from 350 to almost 60 000 YBa2Cu3O7 junctions. Monolithic log-periodic spiral antennas as well as quasioptical resonators have been used to enable power coupling. The arrays were also found to be bias tunable over ranges limited by the receiving apparatus.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary metal-oxide-semiconductor transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O7−δ flux-flow transistors, and separately, Y1Ba2Cu3O7−δ superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2706-2708 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the fabrication of a free-standing YBa2Cu3C7−δ air bridge for useful applications of microstructures and microcircuits integration. We have used a sacrificial dielectric layer, which was subsequently etched, to produce the air gap between top and bottom layers. We have used conventional photolithographic processing, ion-beam dry etching, and selective wet etching with HF to create the novel microstructures. Step coverage of epitaxial bridge layers have been achieved without significant degradation of the superconducting properties of YBa2Cu3O7−δ layers.
    Type of Medium: Electronic Resource
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