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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis of trioxatricornan and derivatives. Useful keystones for the construction of rigid molecular cavities (1992)
    s.l. : American Chemical Society
    The @journal of organic chemistry 57 (1992), S. 61-69 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00027a015
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  • 2
    Electronic Resource
    Electronic Resource
    A quantitative ESR study of cadmium phosphorus chalcogenide (Cd2P2S6) intercalated with cobaltocene (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 3205-3210 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100370a083
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  • 3
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of electron transport in gallium nitride (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1818-1821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an ensemble Monte Carlo simulation of the electron transport in gallium nitride (GaN) are presented. The calculation shows that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. An analytic expression for the polar optical momentum relaxation time for phonon energies larger than the thermal energy is also derived. This expression applies to many wide-gap semiconductors, such as GaN and SiC, at room temperature since these semiconductors have large polar optical-phonon energies (on the order of 100 meV). The calculated mobility agrees well with the results of the Monte Carlo calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354787
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  • 4
    Electronic Resource
    Electronic Resource
    Construction of higher-moment terms in the hydrodynamic electron-transport model (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6197-6207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A critical step in the development of all hydrodynamic transport models (HTMs), derived from moments of the Boltzmann transport equation, is the introduction of accurate closure relations to terminate the resulting infinite set of macroscopic equations. In general, there are a number of resulting integral terms that are highly dependent on the form of the true electron distribution function. The so-called heat flux term is one very important higher-moment term that requires attention. Methods for the accurate construction of an improved heat-flux model are presented. In this construction, a higher-moments approach is combined with a unique definition of electron temperature (i.e., based upon an ansatz distribution) to investigate the effects of conduction-band nonparabolicity and distributional asymmetry. The Monte Carlo method has been used to evaluate the resulting model closures and to study microscopic electron dynamics. These investigations have identified an important relationship between a particular symmetric (i.e., thermal) component of the electron distribution function and the heat flow vector. This knowledge is important because all the parameters in the HTM must be closed (i.e., related to each other through a common set of system variables) before the technique can be accurately applied to the study of electron transport in semiconductor devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355189
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  • 5
    Electronic Resource
    Electronic Resource
    An investigation of the effects of doping profile variations on AlGaAs/GaAs high electron mobility transistor performance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4593-4600 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results from a theoretical study of the influence of doping profile variations on the performance of delta-doped AlGaAs/GaAs high electron mobility transistors (HEMTs). An ensemble Monte Carlo simulation coupled with a self-consistent solution of the two-dimensional Poisson equation is used to investigate HEMTs which employ both single and double delta-doped profiles with varying doping configurations. The calculated results reveal that single delta-doped HEMTs designed with identical threshold voltages exhibit improved device behavior when thinner delta-doped layers with more heavily doped concentrations are utilized. For double delta-doped HEMTs with an identical total doping in the AlGaAs layer, improved threshold voltage control is obtained as the spacing between two delta-doped layers increases. However, this increase in spacing also causes a degradation in transconductance, cut-off frequency, and switching time. As gate bias increases, the dependence of device performance (or degradation) on the spacing between doping planes becomes less pronounced due to the upward shift in threshold or "onset'' of parallel conduction in the AlGaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349096
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  • 6
    Electronic Resource
    Electronic Resource
    Electron-optical-phonon scattering rates in a rectangular semiconductor quantum wire (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 319-327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One-dimensional electron-optical-phonon interaction Hamiltonians in a rectangular quantum wire consisting of diatomic polar semiconductors are derived under the macroscopic dielectric continuum model. The scattering rates calculated in a GaAs square quantum wire show that when the quantum wire is free-standing in vacuum, the interaction by the surface-optical phonon modes is very strong and may dominate over other scattering processes, especially with dimensions of about 100 A(ring) or less. When the wire is embedded in a polar semiconductor (AlAs to be specific), the scattering rates by the surface-optical phonon modes become generally smaller, but yet comparable to those by the confined longitudinal-optical modes as the wire dimension shrinks. A considerable decrease in the total scattering rate for optical phonons as a result of simple reduction in dimensionality is not observed in this study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350275
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  • 7
    Electronic Resource
    Electronic Resource
    Relationship between the intrinsic coercivity and the phases of Nd-(Dy)-Fe-B sintered magnets : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6052-6054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of sintered Nd-(Dy)-Fe-B magnets prepared with different annealing conditions have been investigated. Thermomagnetic analysis was carried out on the sintered and annealed Nd-(Dy)-Fe-B magnets in the temperature range of room temperature to 320 °C. The coercivity of gas-quenched Nd14.1Fe78.3B7.6 magnets after annealing for 1 h at temperatures between 600 and 900 °C is higher by 3 kOe than the furnace-cooled one after annealing. Thermomagnetic analysis found that the sintered Nd14.1Fe78.3B7.6 magnet consists of the Nd2Fe14B phase as well as an unknown magnetic phase (A1) with Tc around 150 °C. The annealed magnets consist of two unknown magnetic phases (A1,A2) and the Nd2Fe14B phase with a Tc of 150, 240, and 305 °C, respectively. Thermomagnetic analysis also showed that the Mr value of the A2 phase in the gas-quenched Nd-Fe-B magnet was higher than that of the furnace-cooled one. These results seem to indicate that increase of coercivity is related to the formation of the A2 phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347767
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  • 8
    Electronic Resource
    Electronic Resource
    A study on the Kerr effect enhancement by the multidielectric layer structure : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5987-5988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many types of magneto-optical structures have been investigated to improve the MO Kerr effect. We have studied the enhancement of the MO Kerr effect in the Tb21Fe79 amorphous film having a multidielectric structure in which the TiO2 layer is sandwiched by SiNx layers. The variations of Kerr angle and reflectivity with the thickness of dielectric layer are calculated by using the reiterative formula [M. Mansuripur, G. A. N. Connel, and J. W. Goodman, J. Appl. Phys. 53, 4485 (1982)]. Experiment and simulation results are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347813
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature epitaxial growth of GaAs on on-axis (100) Si using ionized source beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2866-2869 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of GaAs films on on-axis (100) Si was studied at growth temperatures in the range 160–280 °C using ionized source beam epitaxy. Single-crystal GaAs films could be grown at a temperature as low as 160 °C with the acceleration of a partially ionized As-source beam, whereas at the same temperature only amorphous films were possible with neutral beams or with the ionized source beam with no acceleration. The use of an ionized As-source beam even without beam acceleration greatly improved the surface flatness of the GaAs film, and suppressed the formation of antiphase domains. The acceleration of the ionized As beam further improved the surface quality of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354640
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  • 10
    Electronic Resource
    Electronic Resource
    Reduction of interface phonon modes using metal-semiconductor heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2338-2342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on a simplified analysis of perfectly conducting metals, it has been suggested qualitatively that establishing metal-semiconductor interfaces at the heterojunctions of polar semiconductor quantum wells introduces a set of boundary conditions that dramatically reduces or eliminates unwanted carrier energy loss caused by interactions with interface longitudinal-optical (LO) phonon modes. In this article, it is theoretically demonstrated that comparable reductions in LO phonon scattering strengths may be achieved for metal-semiconductor structures with metal having realistic conductivities and Thomas–Fermi screening lengths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353139
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