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  • 1
    Electronic Resource
    Electronic Resource
    Adjustable boron carbonitride nanotubes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5325-5333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The adjustable photoluminescence (PL) and field electron emission (FEE) properties of boron carbonitride (B–C–N) nanotubes grown under well-controlled conditions are studied systematically. Large-scale highly aligned B–C–N nanotubes are synthesized directly on Ni substrates by the bias-assisted hot filament chemical vapor deposition method. Single-walled B–C–N nanotubes and nanometric B–C–N heterojunctions are obtained by the pulsed-arc-discharge technique and pause-reactivation two-stage process, respectively. It is found that the microstructures, orientations, and chemical compositions of the nanotubes can be controlled by varying growth parameters. The mechanism of the controllable growth is also investigated. Intense and stable PL from the nanotubes is observed in both blue-violet (photon energies 3.14–2.55 eV) and yellow-green bands (photon energies 2.13–2.34 eV) and the emission bands are adjusted by varying the compositions of the nanotubes. FEE properties are also studied and optimized by varying the B or N atomic concentrations in the nanotubes. All these results verify the controllability of the electronic band structure of the B–C–N nanotubes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459596
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  • 2
    Electronic Resource
    Electronic Resource
    Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5144-5147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The SiO2 layers thermally grown on Si wafers were implanted by 130 keV Si ions at liquid nitrogen temperature to a dose of 1×1017 ions/cm2. From the as-implanted samples, a visible photoluminescence band centered around 2.0 eV was observed. After postannealing at 1100 °C for 90 min another visible band in the range of 1.7 eV was detected. Interestingly, with increasing thermal annealing time, a blue shift in peak energy and an intensity variation of the 1.7 eV band were observed. A possible interpretation for the observations was discussed in terms of a so-called three-region model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366317
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  • 3
    Electronic Resource
    Electronic Resource
    Enantiomeric N-substituted N-normetazocines: a comparative study of affinities at .sigma., PCP, and .mu. opioid receptors (1992)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 35 (1992), S. 2812-2818 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00093a014
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen storage in carbon nitride nanobells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1552-1554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aligned carbon nitride (C–N) nanobells in polymer form, prepared by microwave plasma-assisted chemical vapor deposition, were used as hydrogen adsorbent. A hydrogen storage capacity up to 8 wt % was achieved reproducibly under ambient pressure and at temperature of 300 °C. The high hydrogen storage capacity under the moderate conditions was mainly derived from the short nanobell structure with openended graphitic layers, as well as the nitrogen in the nanobells, which acts as an active site for hydrogen adsorption. The high hydrogen uptake and the simple adsorption–desorption process suggest that a C–N nanobell is promising as a hydrogen storage material. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402958
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic characterization of n-ScN/p+ Si heterojunctions (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 995-997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electronic characterization of n-ScN in heterojunctions, including deep level transient spectroscopy of electrically active deep levels. ScN material has been grown by plasma assisted physical vapor deposition on commercial p+ Si substrates. Current–voltage and capacitance–voltage measurements indicate that the built-in voltages for the heterojunctions used in this study are approximately 1.74 and 0.40 eV, as seen by electrons and holes. Deep level transient spectroscopy results show the presence of an electronic trap with activation energy EC−ET=0.51 eV. The trap has a higher concentration (1.2–1.6×1013 cm−3) closer to the ScN/Si interface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447323
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  • 6
    Electronic Resource
    Electronic Resource
    Electron field emission from carbon nanoparticles prepared by microwave-plasma chemical-vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2226-2228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nanoparticles were prepared from H2 and CH4 at various temperatures. The carbon nanoparticles were well graphitized, and the degree of graphitization increased with increasing growth temperature. Field-emission measurements showed that the carbon nanoparticles were excellent electron field emitters, comparable to carbon nanotubes. The field-emission properties became better with increasing growth temperature, and the threshold fields of the carbon nanoparticles deposited at 400, 500, 670 °C were 3.2, 3, and 1 V/μm, respectively. The low-threshold field of the carbon nanoparticles is attributed to the field-enhancement effect and the higher degree of graphitization. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361286
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  • 7
    Electronic Resource
    Electronic Resource
    Blue–violet photoluminescence from large-scale highly aligned boron carbonitride nanofibers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the strong blue–violet photoluminescence (PL) at room temperature from the large-scale highly aligned boron carbonitride (BCN) nanofibers synthesized by bias-assisted hot filament chemical vapor deposition. The photoluminescence peak wavelength shifts in the range of 470–390 nm by changing the chemical composition of the BCN nanofibers, which shows an interesting blue and violet-light-emitting material with adjustable optical properties. The mechanism for the shift of the PL peaks at room temperature is also discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126879
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  • 8
    Electronic Resource
    Electronic Resource
    Synthesis and field-emission behavior of highly oriented boron carbonitride nanofibers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2624-2626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large-area highly oriented boron carbonitride (BCN) nanofibers with various compositions were synthesized directly on polished polycrystalline nickel substrates from a gas mixture of N2, H2, CH4, and B2H6 by bias-assisted hot-filament chemical-vapor deposition. The morphology of BCN nanofibers was examined by scanning electron microscopy, the nanofiber structure was studied by high-resolution transmission electron microscopy, and the chemical composition of individual nanofibers was determined by electron energy-loss spectroscopy. Field-emission behavior of the BCN nanofibers was characterized and a high emission current density of about 20–80 mA/cm2 at a low electric field of 5–6 V/μm implies a promising application as field-emission sources. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126429
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  • 9
    Electronic Resource
    Electronic Resource
    Boron carbonitride nanojunctions (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 124-126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron carbonitride (BCN) nanometric heterojunctions are controllably fabricated by bias-assisted hot-filament chemical vapor deposition with a pause-reactivation two-stage (PRTS) process. Tailored composition revulsion across the nanotube junction is obtained by simply varying the concentration of the gaseous precursor between the two stages of the PRTS process. The critical effect of the plasma power density in the reactivation process on continuous growth of the nanotubes is realized and controlled, leading to successful synthesis of the Y-shaped BCN nanojunctions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1431692
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  • 10
    Electronic Resource
    Electronic Resource
    Nasal tolerance induction as a potential means of immunotherapy for autoimmune diseases: implications for clinical medicine (2000)
    Oxford, UK : Blackwell Science, Ltd
    Clinical & experimental allergy 30 (2000), S. 0 
    Details
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2222.2000.00972.x
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