ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We present the first study of a new system where the confinement potential of a high mobility quasi-one-dimensional electron gas on the (100) GaAs surface is varied using two, two-dimensional hole gases produced on the adjacent (311)A surfaces. The structure consists of two lateral two-dimensional p-n junctions, placed back-to-back to form a p-n-p structure. The confinement potential of the narrow n-type channel can thus be modulated by applying a bias to the adjacent p-type regions. Magnetoresistance measurements of the narrow channel show magnetic depopulation of the one-dimensional subbands [K.-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986)], following the model of Berggren et al. [Phys. Rev. B 37, 10118 (1988)] widths and one-dimensional carrier concentrations are extracted to fully characterize the dependence of the channel on the applied "hole-gate'' voltage. © 1996 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.115913
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