Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Liquid crystal polymorphism in F-actin: Optical microscopic and rotatory dispersion studies (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 8240-8250 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Filamentous actin (F-actin), which occurs abundantly and ubiquitously in living mechanisms such as muscle, nonmuscle cells, and cytoskeleton, exhibits a liquid crystal polymorphism as its concentration is increased. The double-stranded, helical F-actin filaments are 1–70 μm long in our samples. The chirality of the filaments is consistent with the experimental observation of the characteristic cholesteric fingerprint and uniform textures. In addition to the chiral nematic phase, our optical microscopic studies show the occurrence of tilted chiral smectic phases, e.g., smectic C*, I*, or F*, and a smectic B phase. Measurement of optical rotatory dispersion in the cholesteric phase confirms the prediction of the de Vries equation describing the optical rotatory dispersion behavior for cholesterics. The observed lyotropic polymorphism is consistent with the Flory lattice model and a semiflexible polymer mesogen model of F-actin. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480157
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Laser flash photolysis study of polymers containing benzoyl and naphthalene groups (1981)
    s.l. : American Chemical Society
    Macromolecules 14 (1981), S. 693-698 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma50004a046
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Phospholipase D Inhibitors from a Myrsine Species (1995)
    s.l. : American Chemical Society
    Journal of natural products 58 (1995), S. 1492-1497 
    Details
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/np50124a003
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Dimethylsilylene: spectroscopy, reactivity, and complexation in fluid solutions (1988)
    s.l. : American Chemical Society
    Organometallics 7 (1988), S. 1231-1232 
    Details
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/om00095a038
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Reactivity and complexation of dimethylsilylene photogenerated from dodecamethylcyclohexasilane. A kinetic study by laser flash photolysis (1989)
    s.l. : American Chemical Society
    Organometallics 8 (1989), S. 1206-1211 
    Details
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/om00107a013
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Transverse acoustoelectric voltage measurements of GaAs grown directly on (100) Si substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4218-4222 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse acoustoelectric voltage (TAV) measurements have been analyzed as a function of incident photon energy, dc bias voltage, temperature, and surface acoustic wave (SAW) frequency of GaAs layer (∼1.4 μm thick) grown on a vicinal Si(100) substrate by molecular-beam epitaxy. The TAV technique is used to show that the band gap and impurity level transitions are of slightly lower energies, compared to the bulk GaAs. This might be due to the residual strain changes in the band structure of GaAs grown on Si. It is also noticed that the presence of an interface considerably changes the shape of the experimental TAV versus bias voltage at low temperatures. Drastic variations of TAV as a function of SAW frequency and temperature are also observed. The cause of variations is not yet clear, but possible explanations are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343961
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Investigation of the role of ZnSe films on GaAs using acoustoelectric voltage spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 364-369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of the ZnSe/GaAs heterostructure have been investigated using the acoustoelectric voltage spectroscopy technique, and in particular, the role of the high-resistivity ZnSe on the surface passivation of the GaAs substrate has been evaluated. From the transverse acoustoelectric voltage (TAV) spectra, the carrier type and concentration, energy band offsets, and the energy levels of various trap states at the heterostructure interface have been found. The effect of heterostructure epitaxial layer on the surface properties of GaAs has been studied by comparing the normalized changes in TAV amplitude for samples of various epitaxial layers and different thicknesses. From all these measurements, surface recombination velocities (S) have been evaluated. For the pseudomorphic ZnSe films (thickness ≤0.15 μm) on GaAs, a reduction in S has been found. As the thickness of the ZnSe film was increased, the presence of a large number of interface states due to the introduction of misfit dislocations was detected using TAV measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354118
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Nondestructive evaluation of Fe-doped InP using surface acoustic wave technique (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1936-1939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface acoustic wave (SAW) technique is used to investigate the electrical and optical properties of Fe-doped InP. Transverse acoustoelectric voltages (TAV) versus incident photon energy and applied bias voltage are measured to change the surface conductivity induced by impurity level trapping of the carriers. After the sample is etched, an impurity level is detected around 1.405 eV which considerably changes the shape of the experimental TAV versus incident photon energy and TAV versus bias voltage measurements. SAW semiconductor interaction models that tentatively explain the observed data are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346591
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Photochemistry of adsorbed molecules. IX. Ultraviolet photodissociation and photoreaction of HBr on LiF(001) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1361-1377 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dynamics of the UV photochemistry of HBr on LiF(001) has been studied by angle-resolved time-of-flight mass spectrometry in ultra-high vacuum. Single-photon photodissociation of adsorbed HBr at 193 nm resulted in photofragment translational energy distributions that differed from those produced in the gas-phase photolysis. Angular distributions of the fast H-atom photofragments peaked at 55±5° to the surface normal, consistent with a preferentially oriented adsorbate geometry. The angular distribution of atomic H obtained from photodissociation of HBr(ad) using polarized light indicated that a substantial fraction of the H atoms collided with the surface before leaving it. Two types of photoreactions in the adsorbed state were observed. Molecular hydrogen was formed in the photoinitiated abstraction reaction, H+HBr(ad)→H2(g)+Br, and its markedly non-Boltzmann translational energy distribution was found to have less energy than would be consistent with gas-phase experiments (performed elsewhere). Photoproducts from the bimolecular reaction 2HX(ad)→H2+X2, X=Cl, Br were also observed in the present study. This photoreaction, which did not depend on prior photodissociation of HX(ad), is thought to proceed through electronic excitation of an HX dimer in the adsorbed state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461118
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Broad-band structured fluorescence from NaI (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 4478-4489 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The emission spectrum of a molecular beam of NaI has been measured following excitation by the 248 nm KrF line of an excimer laser. The fluorescence structure, and the lifetime (17±2 ns), indicate the presence of a bound upper state not previously characterized. We identify this state as correlating with Na(3 2P)+I(5 2P3/2) atoms. Through numerical simulation using a Morse function representation for the upper state, we have determined approximate values for the well depth of 530±260 cm−1, well breadth of ∼1.8 A(ring)−1, and equilibrium separation of ∼3.4 A(ring) for this state. As a consequence of the breadth of this weakly bound excited state the bound→bound line spectrum spans a broad spectral range (87% of the ground state well depth) entirely comparable with spectra attributed to free→bound emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454787
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...