Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Preparation and properties of the dc reactively sputtered tungsten oxide films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 510-517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preparation and properties of the dc reactively sputtered tungsten oxide films have been investigated in relation to the oxygen concentration in sputtering atmosphere. The films with 1500–20 700 A(ring) thickness were deposited on the glass substrates maintained at 200 °C by dc reactive sputtering from a metallic tungsten target under a constant operating pressure of 6.5×10−2 Torr in Ar-1%–30% O2 gas mixture. The films formed in an Ar-3%–20% O2 gas mixture are crystalline WO3, and have an electrical resistivity of 107–1011 Ω cm which is dependent on the oxygen concentration of the sputtering atmosphere. These films have a spectral transmittance above 80% in the visible and near-infrared regions, and optical band gap of the films ranges from 3.15 to 2.98 eV, depending on the oxygen concentration. Densities of the film deposited in Ar-3% O2 and in Ar-20% O2 gas mixtures are 5.85 g/cm3 and 6.65 g/cm3, respectively. Electrochemichromic properties of the transparent-crystalline WO3 films were studied using asymmetric cells, and were found to be dependent on the crystal orientation of the films. The films with the orientation of WO3 (020) and WO3 (021) formed in an Ar-3%–6% O2 gas mixture have a very good electrochromic property, and the cells composed of the crystalline WO3 films have a higher coloration rate than the cells composed of the vacuum-evaporated amorphous film. The films with the orientation of WO3 (001) and WO3 (021) formed in an Ar-8%–20% O2 gas mixture were found to have a poor electrochromic property.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340272
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Physical and electrochemichromic properties of rf sputtered tungsten oxide films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2526-2534 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical and electrochemical coloration characteristics of tungsten oxide films rf sputtered from a compressed powder WO3 target have been investigated. Oxide films with 3600–9800 A(ring) thickness were deposited on substrates maintained at 200 °C at a total pressure of 0.5–8×10−2 Torr in Ar gas or an Ar-0.5-50% O2 gas mixture. Physical properties of the oxide films depend on the oxygen concentration and total pressure of the sputtering atmosphere. The films prepared at 4×10−2 Torr in a mixture of Ar-0.5-20% O2 gas are transparent and amorphous, and their electrical resistivity ranges from 6.5×108 to 2.4×1011 Ω cm. The films prepared at pressures between 4 and 6×10−2 Torr in an Ar-50% O2 gas mixture are transparent, and have crystallites with a composition of WO3. The films prepared at 1×10−2 Torr in a mixture of Ar-0.5 and 5.0% O2 gas are blue colored and transparent, respectively, and these films are crystallites with a composition of WO2.83. Electrochemichromic properties of the rf sputtered tungsten oxide films depend on the film structure, or on the sputtering conditions under which the films are prepared. The amorphous and crystalline WO3 films formed at a high total pressure of 3–8×10−2 Torr have good electrochemichromic properties and are colored deep blue. However, the crystalline WO2.83 films formed at a low total pressure of 0.5–1.5×10−2 Torr have poor electrochemichromic properties and are hardly colored. The amorphous oxide films with resistivity of 108–109 Ω cm and low density of ∼6.0 g/cm3, formed at a deposition rate higher than ∼100 A(ring)/min, have very good coloration characteristics. The optical properties and density of the oxide films are also described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337001
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Statistical method for efficient determination of electron temperature from pulse height analysis of soft x rays in Heliotron E (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2838-2846 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A pulse-height-analysis (PHA) technique of soft x rays is applied to Heliotron E experiments. The primary interest of this measurement is the determination of the electron temperature. Since the number of photons measured in a PHA system is extremely restricted owing to a finite processing rate of the system, it is most important to use the full amount of information involved in the spectral data. The statistical estimator from the maximum-likelihood method is efficiently used for this purpose. The estimated temperature is in good coincidence with the temperature by the electron-cyclotron-emission measurement, which is calibrated by the laser Thomson scattering. A check of reliability of the estimated electron temperature is developed from a statistical test of goodness of fit. The identification of impurity lines buried in a thermal spectrum is also discussed in the spectra accumulated through several or several tens of plasma discharges. The line emissions from Si, Cl, Ca, and Ti are identified. A systematic error in the estimated temperature due to the impurity lines is evaluated. The contributions from Cl and Ti cannot be neglected in the temperature estimation from a spectrum accumulated through several currentless ECH plasmas in Heliotron E. A removal of those contributions to the temperature estimation is successfully demonstrated. The electron temperature with several percent uncertainty is obtained by PHA every 10 ms during a Heliotron E discharge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140668
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Observation of soft x-ray radiation from Heliotron E plasmas by the absorption method for the measurement of electron temperatures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2847-2856 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An absorption method of soft x ray is applied to Heliotron E plasmas for measurement of the electron temperature. Nitrogen gas is used as an absorber for convenience, owing to its accurate, uniform, and easily controllable density. The general feature of the absorption method for measurement of the electron temperature is discussed using a model with two parameters: the generalized thickness of the absorber and the electron temperature. The energy resolution of this method is not sufficient as a general method for spectral analysis. Hence, it is necessary to assume in advance such a model spectrum as consists of bremsstrahlung, recombination radiation, and impurity line radiation. Since the spectrum is always assumed before the analysis, we should try to find the origins of deformation of the energy spectrum and to correct the contribution. The effect of line emission from impurity ions to the estimated electron temperature is evaluated as a function of the electron temperature and the energy of the line relative to the generalized absorber thickness used in the measurement. An actual spectrum is measured by a pulse-height analysis (PHA) of the soft x ray. The one clear line, from chlorine, is not significant in the present determination of the electron temperature by the absorption method. Another possible line from iron at energy less than 1 keV is included in the analysis. Using a convenient method for determination of local emissivity from a chord-integrated emissivity, the electron temperature is determined from the local emissivity. The observed broad electron-temperature profile might be an artifact due to recombination radiation of the highly ionized ion diffused out of the hot core of the plasma. It is confirmed that the absorption method gives absolute measurement of the electron temperature at the plasma center, when additional information on impurity lines are given by PHA. The estimated temperature is consistent with the PHA measurement. The absorption method combined with PHA provides an easy and inexpensive measurement of the electron temperature compared with a system fully constructed by PHA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140616
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Visible and VUV spectroscopic diagnostics on Heliotron E (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1533-1535 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Diagnostic applications of visible and VUV spectroscopic techniques, as applied to the currentless Heliotron E plasma device, are described. Visible spectroscopy has been used to measure (i) ion temperature, (ii) proton-to-electron density ratio, (iii) Zeff by charge exchange recombination from an intense neutral beam, (iv) radial electric field by poloidal rotation velocity measurement, and (v) electron density around an ablating pellet by a Stark profile. VUV spectroscopy has been used to investigate emission spectra due to multiply ionized impurity species. This information is used to measure the densities of these species, and to learn about the transport of these particles. Recently, a flat-field survey spectrometer has been constructed and used to study the emission spectra due to metallic impurities in ICRF-heated plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140187
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    m=1/n=1 density fluctuations in currentless high-β plasma in heliotron E (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 919-921 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: High-frequency density fluctuations with m=1/n=1 have been observed in a currentless high-β plasma. The line density was measured with a 5-ch FIR laser interferometer. A high-β plasma with 〈β〉∼2% was obtained with about 2-MW neutral beam injection into a currentless target plasma produced by second-harmonic ECRH. With weak gas puffing [β(0)(approximately-greater-than)1%], sawteeth-like oscillations accompanied by high-frequency fluctuations of about 2–5 kHz were observed on the line density. These fluctuations coincide with the soft x-ray fluctuations. From both signals the mode number of this instability is estimated to be m=1 and n=1. During the fluctuations, rapid enhancement (10%–20%) in the edge ion saturation current was also measured, which indicates that this instability causes particle loss from the bulk to the edge. The instability is quenched by a change in density profile from peaked to broad with intense gas puffing. This behavior is consistent with a theoretical analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138042
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs buried quantum well laser diodes by one time selective metalorganic chemical vapor deposition growth on dielectric window stripes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3417-3419 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs graded-index separate-confinement heterostructure lasers with lateral mode confinement are realized by one time metalorganic chemical vapor deposition with silicon dioxide stripes as selective masks and current blocking layers. The effect of the active region width on lasing characteristics is investigated. The threshold current and external quantum efficiency are around 12 mA and 70%, respectively, for narrow lasers. Elevated waveguide structure formed by the growth-rate difference between (100) and sidewall planes was effective for stable lateral mode characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109621
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Second stability in the ATF torsatron—Experiment and theory (1990)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 2 (1990), S. 1353-1358 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Access to the magnetohydrodynamic (MHD) second stability regime has been achieved in the Advanced Toroidal Facility (ATF) torsatron [Fusion Technol. 10, 179 (1986)]. Operation with a field error that reduced the plasma radius and edge rotational transform resulted in peaked pressure profiles and increased Shafranov shift that lowered the theoretical transition to ideal MHD second stability to β0≈1.3%; the experimental β values (β0≤3%) are well above this transition. The measured magnetic fluctuations decrease with increasing β, and the pressure profile broadens, consistent with the theoretical expectations for self-stabilization of resistive interchange modes. Initial results from experiments with the field error removed show that the pressure profile is now broader. These later discharges are characterized by a transition to improved (×2–3) confinement and a marked change in the edge density fluctuation spectrum, but the causal relationship of these changes is not yet clear.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859555
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Electromigration-induced void growth in bamboo structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4423-4429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel resistometric technique enables the investigation of single void nucleation and growth induced by electromigration (EM) for aluminum (Al) lines having a perfect bamboo structure in comparison with single-crystal Al lines. Fine tungsten (W) voltage probes were fabricated at every 4 μm along the Al line with grain sizes of 10 μm or more. Local electrical resistance changes have confirmed that a void nucleated only at the grain boundary and no damage appeared within the grains. The measured values of the local electrical resistance changes were converted to EM-induced void growth rates. The vacancy flux was deduced from the void growth rate under the assumption that a vacancy volume is equal to the atomic volume. It has been clarified that the vacancy fluxes for a bamboo-structured Al line were about one order magnitude smaller than the ideal vacancy fluxes in the Al lattice derived from the Nernst–Einstein relation. The vacancy fluxes for single-crystal Al lines were also quantified under an accelerated test at a high electric current density with a temperature gradient. These results suggest that the bamboo grain boundaries have a blocking effect on vacancy flow. This blocking produces vacancy supersaturation near the grain boundary, and the reduction in vacancy flux is well explained by the back-diffusion due to the corresponding concentration gradient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354413
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Expression of the Alpha-Chain Gene in Heterogeneous IgA Immunodeficiency (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Scandinavian journal of immunology 32 (1990), S. 0 
    Details
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Five heterogeneous IgA-immunodeficient patients were analysed for expression of the α-chain gene. The number of surface IgA-bearing B cells was low in four patients Southern blot analysis indicated no deletion of immunoglobulin structural genes coding for Cα or α switching-region genes. The number of surface IgM and IgA double-bearing B cells increased in some patients. Addition of recombinant tnterieukin 4 (rIL-4). rIL.-5. and rIL-6 to the normal B cells enhanced IgA production. However. B cells of the patients showed no or one-third lower IgA production in response to these lymphokines, even though there was proliferation ill 4, rIL -5, and rIL-6 induced low or no expression of α mRNA of the patients B cells These results suggested that the patients lacked B cells able to produce transcripts for the IgA heavy chain, and that some patients’B cells might be defective at the switch-recombination process from u to a or from μ to α or from μ and α to α.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3083.1990.tb03188.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...