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  • 1
    Electronic Resource
    Electronic Resource
    Magnetism in a chromium jarosite Kagomé lattice KCr3 (OH)6 (SO4)2 (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5658-5658 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The S=3/2 magnetic Cr3+ ions in KCr3 (OH)6 (SO4)2 form a quasi-two-dimensional Kagomé lattice. Susceptibility measurements show a Curie–Weiss temperature of −70 K but specific heat data show a peak at 1.8 K. This depression of the ordering temperature is a result of the extreme frustration of the Kagomé lattice. The change in entropy up to 2.8 K is 0.15 K ln 4. Neutron scattering measurements on a powder specimen put an upper limit of 1 μB on the long-range ordered moments. Constant energy inelastic neutron scattering data with energy transfers of 1.0 and 1.4 meV show a broad peak centered at about 1 A(ring)−1 indicative of strong spin fluctuations at both 0.3 and 10 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353631
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  • 2
    Electronic Resource
    Electronic Resource
    Substrate temperature effects on the preparation of YBa2Cu3O7−x superconducting films on (100) SrTiO3 by laser ablation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5661-5666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ high-Tc superconducting thin films of YBa2Cu3O7−x were deposited on (100) SrTiO3 substrate by laser ablation with a glancing angle geometry at different substrate temperatures in the 560–700 °C range. The transition temperatures, x-ray diffraction patterns, and surface morphologies of the films were substantially different from one another. The critical temperatures of the films deposited at below 600 °C were 72–84 K, while the films deposited at above 650 °C showed Tc0 of 85–91 K. The x-ray diffraction patterns and surface morphologies of the films showed that the orientations of the deposited films depended on the substrate temperature. The films deposited at 700 °C showed an exclusive orientation of "c'' axis perpendicular to the (100) SrTiO3 substrate surface, but those deposited at below 600 °C exhibited random but a preferential orientation of c axis parallel to the (100) SrTiO3 surface. The dependence of the film orientations versus substrate temperature is explained in terms of lattice misfits as well as the surface mobility of the adatoms or molecules at the deposition temperature. Also, the deposition rates were found to be a function of the substrate temperature, and the activation energy of surface migration of adatoms was measured to be 0.21±0.03 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350182
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  • 3
    Electronic Resource
    Electronic Resource
    A molecular dynamics simulation study on nematic–isotropic phase transition of rod-like molecules in NpT ensemble (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 6933-6941 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The nematic–isotropic (N–I) phase transition of rod-like molecules is investigated by molecular dynamics (MD) simulation. This study is focused on three different aspects. First, a more realistic model than a hard core system is employed. Second, the MD simulation enables us to calculate time-dependent functions. Last, an isothermal–isobaric (NpT) ensemble is used to consider the change of volume at the N–I transition. The results of MD simulation suggest that the interatomic potential plays an important role in the N–I phase transition of rod-like molecules. The MD simulation of the N–I phase transition of rod-like molecules can predict the "weak first orderedness'' accurately. Both translational and rotational diffusion coefficients of rod-like molecules in the system with a smaller value of σ are larger than those with a larger value of σ, and the calculated rotational reorientation time of rod-like molecules in isotropic phases lies in the 10−11–10−10 s range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463647
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of dielectric materials on electromigration failure (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7797-7808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of dielectric layers on electromigration failure were studied in situ using a high-voltage scanning electron microscope and at the wafer level using conventional accelerated testing. Several different passivation layers were deposited on wafers with A1 interconnect test structures. Prior to the deposition of the final dielectric, the wafers were processed identically and, whenever possible, simultaneously. Interconnects encapsulated with compliant polymer and very thin (0.1 μm) SiO2 layers demonstrated substantial lifetime extensions over those with more rigid (1 μm thick) SiO2 layers. Unpassivated lines behaved dramatically differently and failed much sooner than those covered with only 0.1 μm of SiO2. As expected, increasing the passivation thickness from 0.5 to 4 μm increased the electromigration lifetime for SiO2 covered specimens. The fabrication of silicon dioxide dielectrics using electron-cyclotron-resonance chemical-vapor deposition (CVD) and silicon nitride dielectrics via plasma-enhanced CVD damaged the interconnects. This damage nearly completely removed the barrier to void nucleation during electromigration. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372367
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  • 5
    Electronic Resource
    Electronic Resource
    Te doping of GaInP: Ordering and step structure (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3590-3596 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The donor Te has been added to GaInP during organometallic vapor phase epitaxial growth using the precursor diethyltelluride. In agreement with previous studies, the addition of high Te concentrations leads to the elimination of the CuPt ordering observed in undoped layers. The degree of order is estimated from the low temperature photoluminescence peak energy to decrease from 0.5 at Te concentrations of 〈2×1017 cm−3 to 0 for Te concentrations of 〉6×1017 cm−3. This is verified by transmission electron diffraction studies, which show the elimination of the 1/2{111} superlattice spots at high Te doping levels. A remarkable change in the surface structure is found to accompany this decrease in ordering: The surfaces become much smoother. Step bunching is observed to disappear for the vicinal GaAs substrates, misoriented from (001) by 3° in the B direction, and three-dimensional island (or mound) formation is eliminated for the singular (001) substrates. A qualitative model is presented explaining this behavior based on the effect of Te on the step structure and the bonding at step edges, both of which affect the adatom sticking at steps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369719
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  • 6
    Electronic Resource
    Electronic Resource
    Major enhancement of extra-low-frequency radiation by increasing the high-frequency heating wave power in electrojet modulation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 315-321 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extra-low-frequency (ELF) wave generation by modulated polar electrojet currents is studied. The amplitude-modulated high-frequency (HF) heating wave excites a stimulated thermal instability to enhance the electrojet current modulation by the passive Ohmic heating process. Inelastic collisions of electrons with neutral particles (mainly due to vibrational excitation of N2) damp nonlinearly this instability, which is normally saturated at low levels. However, the electron's inelastic collision loss rate drops rapidly to a low value in the energy regime from 3.5 to 6 eV. As the power of the modulated HF heating wave exceeds a threshold level, it is shown that significant electron heating enhanced by the stimulated thermal instability can indeed cause a steep drop in the electron inelastic collision loss rate. Consequently, this instability saturates at a much higher level, resulting to a near step increase (of about 10–13 dB, depending on the modulation wave form) in the spectral intensity of ELF radiation. The dependence of the threshold power of the HF heating wave on the modulation frequency is determined. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427726
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  • 7
    Electronic Resource
    Electronic Resource
    Step structure and ordering in Zn-doped GaInP (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1982-1987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInP grown on (001) substrates by organometallic vapor phase epitaxy is typically highly ordered. The driving force is due to the [1¯10] oriented P dimers on the surface. There are apparently additional kinetic factors related to surface steps that also play a key role in the ordering mechanism. However, the mechanism remains undetermined. This work presents the effects of Zn on the step structure and ordering during epitaxial growth. The degree of order is estimated from the low temperature photoluminescence peak energy to be approximately 0.5 for undoped epitaxial layers and the layers are completely disordered at Zn doping concentrations [from dimethyzinc (DMZn) addition to the system] of 〉1.7×1018 cm−3. This is verified by transmission electron diffraction results. As a consequence, the band gap energy increases by 110 meV as the Zn doping level is increased from 3×1017 to 1.7×1018 cm−3. The [1¯10] and [110]-step spacing as well as the root-mean-square roughness are found to be unchanged over the range of doping that produces disordering for both singular (001) and vicinal substrates. This indicates the disordering mechanism induced by Zn does not involve the step edge adatom attachment kinetics as previously reported for Te. The disordering is believed to be caused by the intermixing of Ga and In due to the increase in diffusion coefficient caused by the introduction of Zn. Modulation of the DMZn flow rate during growth has been used to grow heterostructures and quantum wells. No well boundaries were observed by transmission electron microscopy for thin wells, although both ordered and disordered regions are observed in 50 nm "wells." This is believed to result from Zn diffusion between the layers during growth. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370997
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  • 8
    Electronic Resource
    Electronic Resource
    A high-voltage scanning electron microscopy system for in situ electromigration testing (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2848-2854 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus has been constructed to conduct electromigration tests on realistic specimens while simultaneously observing them at relatively high magnification. A scanning transmission electron microscope has been converted into a high-voltage scanning electron microscope (HVSEM) with a large specimen chamber. By imaging with high-energy electrons (120 keV) and detecting backscattered electrons, voids in metal lines can be viewed through passivation layers. The HVSEM has a resolution of 50 nm through 1 μm of passivation. We have constructed instrumentation to heat and pass current through interconnect structures, while they are inside the electron microscope. Presently, the specimen temperature can be as high as 350 °C and is maintained constant to within 0.1 °C. The resistances of interconnects are measured with a precision of 0.05% during an experiment. Testing the lines at moderately accelerated conditions requires great stability of the microscope and instrumentation as well as full automation of the data collection. These requirements have been met, and metallization lines can be tested for several weeks with minimal operator intervention. Digital images of an entire 300-μm-long test structure as well as electrical data are stored automatically every few minutes during a test. The hundreds to thousands of pictures are analyzed using digital image processing techniques to extract void positions and sizes as a function of time. We use this system to characterize electromigration failure in advanced interconnect structures and to test existing theories on electromigration phenomenon. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150702
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  • 9
    Electronic Resource
    Electronic Resource
    Maffucci's syndrome with oral and intestinal haemangioma (1999)
    Oxford BSL : Blackwell Science Ltd
    British journal of dermatology 140 (1999), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.1999.02840.x
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  • 10
    Electronic Resource
    Electronic Resource
    Alkylation of Thiophene with Olefins1 (1948)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 70 (1948), S. 1552-1555 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01184a077
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