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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2896-2899 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric PbTiO3 films were deposited by ion-beam-assisted deposition (O2+Ar 75–150 eV). The effects of ion bombardment on the Pb/Ti ratio and the structures of the film are discussed. For a given target-substrate distance and substrate temperature, the Pb/Ti ratio decreased with increasing bombarding beam energy. Compared with the films deposited without ion bombardment, the deposition rate was increased under ion bombardment, which is attributed to an increase in the surface reaction rate. The crystal grains are larger for films deposited under ion bombardment, which implies that ion bombardment enhances the surface mobility of adatoms and hence the growth kinetics of the growing films. Dielectric and ferroelectric properties of the as-deposited films are also reported.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetic properties of the R2Fe17−xGax compounds (R=Y, Ho, 0≤x≤6) have been investigated. All investigated Ho2Fe17−xGax compounds with x(approximately-greater-than)2.5 crystallize in the Th2Zn17-type structure and the others in the Th2Ni17-type structure. The substitution of Ga for Fe leads to an increase in lattice constants a, c, and unit-cell volume, a decrease of the average Fe moment, and a maximum of the Curie temperature as a function of the Ga concentration at x=3, for both Y2Fe17−xGax and Ho2Fe17−xGax compounds. The high magnetic field leads to a spin phase transition from the ferromagnetic to the canted phase. The critical field Bc of the transition decreases with increasing Ga concentration. The exchange interaction constants JTT between Fe–Fe spins and JRT between R–T spins have been derived from a mean field analysis of Curie temperature. It has been found that JTT increases at first, going through a maximum at x=3, then decreases with increasing x, whereas JRT is almost independent of the Ga content, which is consistent with the result obtained from a mean field analysis of the high field magnetization curves of the Ho2Fe17−xGax.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of Sm2(Fe1−xGax)17 compounds and their nitrides have been studied. Substitution of Ga for Fe leads to an increase in lattice constants. Introduction of nitrogen results in a further increase in lattice constants. Substitution of Ga for Fe causes a dramatic change of the Curie temperature of the Sm2(Fe1−xGax)17 compounds. When x=0.2 the Curie temperature is enhanced by about 200 K. X-ray-diffraction patterns of aligned samples of Sm2(Fe1−xGax)17 compounds show that alloys with x=0.15, 0.20, and 0.25 exhibit uniaxial anisotropy at room temperature. The introduction of nitrogen made the samples with x≤0.4 exhibit uniaxial anisotropy at room temperature. The Curie temperature of the nitrides decreases with the Ga concentration. The anisotropy fields of the nitrides derived from the high-field magnetization. The changes of the magnetic anisotropy, saturation magnetization, and the moment of the Fe atoms in the nitrides and their parent compounds with Ga concentration are discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6238-6240 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetic properties of the interstitial (Er1−xRx)2Fe17Ny compounds with R=Y and Gd, x=0, 0.1, 0.25, 0.4, 0.5, 0.6, 0.75, and 1.0, 2〈y〈3, have been investigated. All the parent compounds crystallize in the Th2Ni17-type structure, except for Gd2Fe17 which crystallizes in the Th2Zn17-structure. All nitrides preserve the same structure as the parents. Introduction of nitrogen results in an increase in lattice constants a and c, and the expansion of unit-cell volume is about 6%. The Curie temperature was found to increase distinctly after nitrogenation. Nitrogen absorption leads to an increase in saturation magnetization, the values of the saturation magnetization increase monotonically with increasing Y or Gd concentration. Nitrogenation increases the uniaxial anisotropy of the Er sublattice, and causes a spin reorientation. The Y and Gd concentration dependencies of the spin reorientation temperature Tsr exhibit maxima. The tentative spin phase diagrams are presented.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1402-1404 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A composite hardness model based on the function of depth weight factor is presented. The model can be applied to determine the characteristic hardness of surface coatings which are too thin for the hardness to be directly measured. Its application requires only composite hardness data obtained from coated specimens by conventional microhardness measurement. DLC, TiN, and Cu films on substrates of glass, silicon, and AISI 52100 steel were used to verify this composite hardness model. It proved valid for a variety of cases. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1879-1881 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nanotube junctions are of great interest in the fundamental research and nanoelectronic applications. Identical carbon nanotube Y junctions have been successfully synthesized by pyrolysis of methane over cobalt supported on magnesium oxide. The Y junctions have very straight arms with uniform diameters, and the angles between the three arms are close to 120°. Based on the analysis on the structure of the Y junctions the growth mechanism has been discussed. The fact that all the Y junctions grow in a similar way may be very important in the development of nanoelectronic devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 500-502 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron carbide nanolumps are formed on the surface of multiwall carbon nanotubes by a solid-state reaction between boron and carbon nanotubes. The reaction is localized so that the integrity of the structure of carbon nanotubes is maintained. Inner layers of multiwall carbon nanotubes are also bonded to boron carbide nanolumps. These multiwall carbon nanotubes with boron carbide nanolumps are expected to be the ideal reinforcing fillers for high-performance composites because of the favorable morphology. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [s.l.] : Macmillan Magazines Ltd.
    Nature 394 (1998), S. 631-632 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Carbon nanotubes can now be produced in large quantities by either arc methods, or thermal decomposition of hydrocarbons,. Here we report that pyrolysis of acetylene over iron/silica substrates is an effective method with which to produce very long, multiwalled carbon nanotubes that reach about ...
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 2350-2352 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 52 (1996), S. 555-557 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The title compound, [Ni(C12H26N2S4)](NO3)2.H2O, displays distorted octahedral coordination at the Ni atom with two almost planar S—N—S donor moieties normal to each other. The S atoms are in the equatorial plane, with the N atoms axial. The principal distances are Ni—S 2.403 (3)–2.445 (3) and Ni—N 2.069 (8)–2.118 (8) Å.
    Type of Medium: Electronic Resource
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