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  • 1
    Electronic Resource
    Electronic Resource
    Reversible trap to cabanion electron transfer in .gamma.-irradiated hydrocarbon glasses (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 1135-1136 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100604a019
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 400-405 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Piezoreflectance (PzR) and contactless electroreflectance (CER) measurements of an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure as a function of temperature in the range of 20–300 K have been carried out. A careful analysis of the PzR and CER spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The parameters that describe the temperature dependence of EmnH(L) are evaluated. A detailed study of the temperature variation of excitonic transition energies indicates that the main influence of temperature on quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. The temperature dependence of the linewidth of 11H exciton is evaluated and compared with that of the bulk material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364071
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  • 3
    Electronic Resource
    Electronic Resource
    Study of critical properties of the Potts model by the modified variational cumulant expansion method : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6347-6349 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modified variational cumulant expansion (VCE) method valid for the whole temperature range and for arbitrary fields is developed to study the critical properties of the general q-state Potts model used to stimulate various magnetic systems. The series expansion is generated directly in terms of the Potts Hamiltonian. The free energy and the internal energy are calculated up to the third-order cumulant terms for the d-dimensional hypercubic q-state Potts model. The expression for the critical temperature Tc is derived in a closed form which allows to determine Tc up to arbitrary order cumulant terms. The modified VCE method eliminates the unphysical first-order phase transition at the mean-field critical point in the internal energy of the Potts model which plagues the conventional VCE method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358262
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray truncation rod study of Ge(001) surface roughening by molecular beam homoepitaxial growth (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6858-6864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface roughness was determined by x-ray diffraction for Ge films on Ge(001) grown by molecular beam epitaxy at room temperature. The truncation rod intensities and transverse-scan line profiles were measured as a function of perpendicular momentum transfer. Depending on the initial morphology of the surface, the same growth condition resulted in very different surface morphologies. Two types of initial surfaces were used. One was an atomically flat surface with very large terraces. The other, characterized by a roughness exponent α=1, had a high density of steps. Deposition on the flat surfaces resulted in a fairly smooth surface, but with a graded crystalline density below the surface. Deposition on the α=1 surfaces resulted in a more jagged surface characterized by an increase in the average height–height correlation function and a final roughness exponent of α=1/2. Additional and complementary information about the surface structure was obtained by scanning tunneling microscopy observations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361507
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  • 5
    Electronic Resource
    Electronic Resource
    Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 460-466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the piezoreflectance (PzR) spectra at 300 and 80 K related to the intersubband transitions from two different (001) GaAs/AlGaAs structures, an asymmetric triangular quantum well and a rectangular quantum well, fabricated by molecular beam epitaxy using the digital alloy compositional grading (DACG) method. A comparison of the relative intensity of heavy- and light-hole related features in the PzR spectra and those in the photoreflectance emphasizes the contribution of the strain dependence of the energies of the confined states which allows us to identify the features associated with the heavy- and light-hole valence bands unambiguously. Comparison of the observed intersubband transitions with the envelope function calculations provides a self-consistent verification that the DACG method generated the desired potential profiles. Furthermore, the temperature dependence of both the energy position and broadening parameter of the fundamental conduction to heavy-hole (11H) and light-hole (11L) excitonic features are investigated in the range of 20–300 K. The anomalous behavior of the temperature dependence of the linewidth of 11H(L) excitonic features of the samples are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360852
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  • 6
    Electronic Resource
    Electronic Resource
    Absolute partial cross sections for electron-impact ionization of CH4 from threshold to 1000 eV (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 4430-4435 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Absolute partial cross sections for the production of CH4+, CH3+, CH2+ , CH+, C+, H2+, and H+ from electron-impact ionization of CH4 are reported for electron energies from threshold to 1000 eV. The product ions are mass analyzed using a time-of-flight mass spectrometer and detected with a position-sensitive detector whose output demonstrates that all product ions are completely collected. The overall uncertainty in the absolute cross section values is ±3.5% for singly charged parent ions and is slightly greater for fragment ions. Although previous measurements are generally found to agree well with the present results for CH4+ and CH3+, almost all previous work for the remaining fragment ions lies lower than the present results and in the case of H+ is lower by approximately a factor of 4. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473468
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  • 7
    Electronic Resource
    Electronic Resource
    Surface effect on spin waves in semi-infinite ferrimagnets (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 947-949 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface effect on the spin-wave spectrum in two-sublattice ferrimagnets is investigated by means of the retarded Green's function equation of motion method. The two-sublattice Heisenberg model with nearest neighbor interactions is assumed in our discussion. We find that for a NaCl structure, the (001) free surface spin-wave spectrum splits up into acoustic and optical branches as usual. For the case of a CsCl structure, the (001) surface spin wave depends solely upon the nature of the magnetic ions in the surface layer. It has only the optical branch when the surface layer belongs to one sublattice, and has only the acoustic branch when the surface layer belongs to the other. Other properties are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341902
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6421-6427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent contactless electroreflectance (CER) and photoluminescence (PL) measurements in the range of 30 K〈T〈300 K on two GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with different well widths fabricated by molecular-beam epitaxy on (100) GaAs substrates are presented. For the CER measurement, the 11H transition is completely screened out by the two-dimensional electron gas and the prominent feature related to the Fermi energy edge singularity transition showed a Stokes shift to higher energy with respect to the 21H transition of the PL measurements at low temperature. From the Stokes shifts, the Fermi energy level of the system is evaluated, and hence, the density of the two-dimensional electron gas. The temperature-dependent PL measurements revealed two features, identified to be the 11H and 21H transitions. The relative intensities of the 11H and 21H transitions were analyzed taking into account the effect of the subband filling and the wave-function overlap factors. A good agreement is found between experimental data and theoretical calculation results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416854
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  • 9
    Electronic Resource
    Electronic Resource
    Electron multiplication and electrostatic discharge wave forms (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2580-2586 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal block, immersed in the electric field of an electrode, has been used to study the electrostatic discharge phenomenon. Using a high-speed transient oscilloscope, current wave forms of air discharge across a small fixed gap between the metal block and a current probe have been measured. The combined bandwidth of the measurement setup, including the oscilloscope, cables, connectors, splitter, and the probe, is above 3.5 GHz. The setup is capable of measuring rise time as fast as 100 ps. Voltage change on the metal block was also measured by a low-speed transient oscilloscope. For a gap of 0.01 cm and a voltage of 1086 V, the observed current wave form of the discharge exhibits a rise time of 300 ps, a peak current of 5.8 A, and a pulse width at half-height of 770 ps, about 2.6 times the rise time. The existence of a residual voltage on the metal block after each discharge was also observed. Using the Townsend's α coefficient for the electron multiplication in air, an analytic model and a one-dimensional numerical model have been developed to explain the wave-form characteristics and the residual voltage observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351075
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  • 10
    Electronic Resource
    Electronic Resource
    Internal explosion in laser ablation of superconducting targets (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4227-4231 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature profile inside a superconducting target in laser ablation is calculated for laser pulses of various shapes. The calculation is based on the equation of heat conduction. All parameters characterizing the target material are assumed to be temperature dependent and are determined empirically by extrapolating experimental data to the melting point. The receding velocity of the vapor-solid interface is determined by the dynamical balance of energy. Our calculation shows that, in general, there exist subsurface overheating spots at different instants as long as the laser pulse intensity is strong enough. The dependence of their occurrence on the pulse shape is analyzed, and conditions to avoid them without jeopardizing the deposition process are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352234
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