Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 3597-3601
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Results of a combined experimental and theoretical study are presented. GaAs{113} and {112} surfaces have been prepared by molecular beam epitaxy and analyzed in situ by low-energy electron diffraction and ex situ by atomic-force microscopy. The experimentally found structures are in full agreement with surface energies calculated by density-functional theory. The {112} surfaces are unstable under faceting into low-index planes, whereas the {113} surfaces appear as singular surfaces. Particularly, for GaAs(113) the surface energy is comparable with the values for the low-index surfaces. The impacts of these results on the interface between InAs quantum dots and the embedding GaAs matrix are discussed. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.369720
Permalink
Bibliothek |
Standort |
Signatur |
Band/Heft/Jahr |
Verfügbarkeit |