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  • 1
    Electronic Resource
    Electronic Resource
    A new force controlled atomic force microscope for use in ultrahigh vacuum (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2281-2285 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We introduce a magnetic force controlled atomic force microscope (AFM) and point contact probe for use in ultrahigh vacuum and describe how our technique can significantly enhance the current capabilities of scanning probe microscopes. The instrument is specially designed to provide quantitative information on the nature of the tip-surface interaction. Forces are applied directly to magnetic material deposited behind the AFM tip via a current carrying coil. Oscillating the applied force and measuring the resulting displacement amplitude gives a continuous measurement of the absolute force gradient or contact stiffness. From this measurement the contact area or effective interaction area can be calculated for clean surfaces, thus eliminating the problems of unknown resolution and also facilitating the study of conduction and mechanical properties of small volumes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147047
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1347-1349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy (STM) has been made on an as-prepared Si(111) surface by the 1%-HF treatment. The STM images for both the empty and filled states exhibit regular dots with the threefold symmetry on the flat parts of the surface: the distance between dots measures 2.2 A(ring). The origin of these dots can be ascribed to the H atoms of the trihydride (SiH3) phase on the Si(111) surface. The electrons can tunnel from or to the tail states of the σ (filled) states or the σ* (empty) states around the H atoms for the SiH3 radicals, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105304
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic resolution images of H-terminated Si(111) surfaces in aqueous solutions (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2534-2536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first atomic images of the hydrogen terminated Si(111) surface have been acquired in aqueous sulfuric acid solutions. The observed interatomic distance with threefold symmetry is ∼3.8 A(ring), indicating that the ideal Si(111):H-1×1 surface can be prepared by chemical etching in NH4F solutions. It is demonstrated that in situ scanning tunneling microscopy is an extremely important method for revealing chemical processes with atomic resolution in the chemical etching of semiconductors in solutions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106904
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  • 4
    Electronic Resource
    Electronic Resource
    Direct observation of precipitates and self-organized nanostructures in molecular-beam epitaxy grown heavily doped GaAs:Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3123-3125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a cross-sectional scanning tunneling microscopy investigation of heavily Si doped [001]-oriented GaAs grown by molecular-beam epitaxy. At a very high doping level (6×1019 cm−3), Si-doping induced precipitates are directly observed in XSTM images of the as-grown epitaxial layers. Most of the precipitates are found to have a characteristic oval shape with the long axis (∼80 A(ring)) along the growth direction. In contrast to the low diffusivity of randomly distributed Si dopants in the moderate doping regime, these precipitates are found to be highly mobile and spontaneously form "nanowires'' during crystal growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114854
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  • 5
    Electronic Resource
    Electronic Resource
    Nanoscale imaging of domain dynamics and retention in ferroelectric thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3492-3494 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results on the direct observation of the microscopic origins of backswitching in ferroelectric thin films. The piezoelectric response generated in the film by a biased atomic force microscope tip was used to obtain static and dynamic piezoelectric images of individual grains in a polycrystalline material. We demonstrate that polarization reversal occurs under no external field (i.e., loss of remanent polarization) via a dispersive continuous-time random walk process, identified by a stretched exponential decay of the remanent polarization. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120369
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic-scale nature of the (3×3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 362-364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ scanning tunneling microscopy and time-resolved reflection high-energy electron diffraction measurements were performed to study the nitridation process of the As-terminated GaAs(001)-(2×4) surface by using electron cyclotron resonance plasma-assisted molecular-beam epitaxy. We report the real-space atomic structure of the coherently strained (3×3)-ordered GaN monolayer on GaAs(001) after a limited-exposure nitridation process and the atomically smooth morphology of this nitrided surface. The unique (3×3) phase is found consisting of nitrogen dimers and a regular array of missing nitrogen rows in both [1¯10] and [110] directions.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119538
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  • 7
    Electronic Resource
    Electronic Resource
    Nanoscale investigation of fatigue effects in Pb(Zr,Ti)O3 films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3191-3193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning force microscopy has been used to perform a comparative nanoscale study of domain structures and switching behavior of Pb(ZrxTi1−x)O3 (PZT) thin films integrated into heterostructures with different electrodes. The study revealed a significant difference between polarization state of as-deposited PZT films on RuO2 and Pt electrodes. The PZT/RuO2 films exhibit polydomain crystallites and show almost symmetric switching behavior, while the PZT/Pt films are mainly in a single polarity state and exhibit highly asymmetric piezoelectric hysteresis loops. Formation of unswitchable polarization within the grains of submicron size as a result of fatigue process was directly observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117957
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  • 8
    Electronic Resource
    Electronic Resource
    Layer-by-layer atomic manipulation on Si(111)-7×7 surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3482-3484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Layer-by-layer removal of Si atoms from the Si(111)-7×7 surface was executed at room temperature by making a point contact of a biased W tip of scanning tunneling microscope (STM) to the sample surface. The adatom layer and the three layers were controllably removed by tuning the sample bias voltage. In the created holes, clear atomic images were obtained. The current between the STM tip and substrate exhibited characteristic structures during the tip excursion, which are closely related with the atom removal process and the nature of the Si nanoscale wire, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115765
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  • 9
    Electronic Resource
    Electronic Resource
    Alternative method for the activation and measurement of lateral forces using magnetically controlled atomic force microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3883-3885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of a different design of atomic force microscope cantilever for the study of lateral forces during a tensile transition to contact. The design of the cantilever is based on a seesaw structure which maintains sufficiently high stiffness in the normal direction and lateral scanning direction to enable stability during tip–sample approach and subsequent lateral scanning. Dynamic measurements are made by a combination of magnetic and piezo lever activation. We utilize the resonance modes of the normal and lateral tip motion in order to minimize coupling between the two signals and to increase sensitivity. High-resolution images of a strontium titanate sample are simultaneously acquired in the normal and lateral dynamic modes, and show distinctly different contrast, indicating that indeed the two interactions can be measured independently. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125488
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  • 10
    Electronic Resource
    Electronic Resource
    High resolution eddy current microscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 383-385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a sensitive scanning force microscope based technique for measuring local variations in resistivity by monitoring changes in the eddy current induced damping of a cantilever with a magnetic tip oscillating above a conducting sample. To achieve a high sensitivity, we used a cantilever with an FeNdBLa particle mounted on the tip. Resistivity measurements are demonstrated on a silicon test structure with a staircase doping profile. Regions with resistivities of 0.0013, 0.0041, and 0.022 Ω cm are clearly resolved with a lateral resolution of approximately 180 nm. For this range of resistivities, the eddy current induced damping is found to depend linearly on the sample resistivity. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339840
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