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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2279-2286 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Experimental data are presented along with calculations which describe the near-threshold transverse modes in AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers with two different Bragg reflector systems. The Bragg reflector systems are composed of either AlAs/GaAs quarter-wave stacks or a combination of AlAs/GaAs and ZnSe/CaF. The temperature dependence of the lasing mode is studied for three different structures, and it is shown that higher-order lasing modes are favored with strong cavity detuning when the cavity resonance exists at a wavelength greater than the bulk emission peak. Important aspects of the lasing behavior are described by calculating the spontaneous mode which occurs at the lasing wavelength. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1598-1600 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Calculated data are presented that compare the control of the lasing wavelength for different dielectric vertical-cavity surface-emitting lasers that use a GaAs tuning layer of variable thickness to control the longitudinal cavity resonance. The advantages of high-contrast Bragg reflectors and a half-wave cavity spacer thickness become obvious in achieving both a wide tuning range and minimizing reflectivity changes. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2594-2596 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented characterizing the spontaneous coupling to both planar and index-confined quasimodes of Fabry–Pérot microcavities. Index confinement is achieved using selective conversion of AlAs–AlxOy through "wet'' oxidation to fabricate lateral cavity sizes as small as 2 μm diam. Spectral tuning and angular radiation patterns show the increased spontaneous coupling that results from three-dimensional confinement. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3153-3157 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Five-micron long AlGaAs/GaAs Fabry–Pérot vertical cavities with thin GaAs active regions of two different thicknesses are analyzed both theoretically and experimentally in terms of their optical transmission characteristics, spontaneous radiation patterns, and spontaneous spectral emission characteristics. The effects on spontaneous emission of the precise placement of the GaAs active region and also the thickness of this region, as compared to the emitted wavelength, are demonstrated. The measured results are compared with theoretical calculations which are based on the first-order perturbation field theory presented in an earlier publication. Good agreement is found in the comparison between the theoretical predictions and the experimental results, and indicates the controllable spontaneous emission in these long vertical cavities.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3383-3385 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on modified spontaneous emission rates in quantum dot microcavity arrays. Three-dimensional optical confinement is achieved using apertured microcavities with square aperture sizes varied from 5 to 1 μm on a side. A maximum measured increase in the on-resonance spontaneous emission rate over that off resonance is ∼50%, and we identify this enhancement with apertured modes of the microcavity. Oscillations in the spontaneous emission rate versus wavelength correspond to spectral resonances in the higher order aperture modes. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6362-6364 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on the dependence of Al content on the formation of InAlGaAs quantum dots grown by strained-layer molecular beam epitaxy. Atomic force microscopy and reflection high-energy electron diffraction patterns show that the addition of Al both slows the formation of the quantum dots in the brief time following layer deposition, and results in smaller dots of higher density. The effects might be qualitatively explained by reduced surface migration of the column III atoms due to the stronger Al bond strength. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3325-3327 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Rate equations are used to show that the modulation response of quantum dot lasers can be limited by entropy change due to carrier relaxation from a wetting layer. The entropy change is due to the difference in the spectral density of quantum states between the two-dimensional wetting layer and the zero-dimensional quantum dot. When limited by this effect, the laser's 3 dB modulation response becomes strongly temperature dependent. © 2000 American Institute of Physics.
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3351-3353 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on the lasing transitions from InGaAs/GaAs quantum dots that exhibit four well-resolved energy transitions, with the electronic state density of a two-dimensional harmonic oscillator. Lasing has been obtained on the second and third transitions, depending on the cavity (gain) length, with the longest lasing wavelength measured to be 1.19 μm. The temperature dependence of threshold is studied and regions of nearly temperature-independent threshold are found. Interesting aspects of the unique electronic state density for lasers are discussed. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2356-2358 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on an oxide-confined vertical-cavity surface-emitting laser that uses a quantum dot active region. The laser is grown by molecular beam epitaxy, with the quantum dot active region formed from a five monolayer deposition of In0.50Ga0.35Al0.15As. Lasing occurs at wavelengths corresponding to quantum dot transitions, with a room temperature pulsed threshold as low as 560 μA for a 7 μm diameter oxide aperture. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1781-1783 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on vertical-cavity surface-emitting lasers that use high contrast distributed Bragg reflectors on both sides of the cavity. The upper reflector consists of a six pair ZnSe/MgF quarter-wave stack, while the lower reflector consists of an eleven pair AlxOy/GaAs stack fabricated using selective oxidation. Strain due to the lower reflector is reduced by using AlxOy layers of less than a quarter-wave thickness. Device sizes ranging from 1 to 7 μm diameters are characterized, with a minimum threshold current of 53 μA. © 1997 American Institute of Physics.
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