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Digitale Medien

An ultrastructural study of spontaneous mineralization in the brains of aging mice (1982)

Morgan, K. T. ; Johnson, B. P. ; Frith, C. H. ; [weitere]

Springer

Acta neuropathologica 58 (1982), S. 120-124

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ISSN: 1432-0533

Schlagwort(e): Mouse ; Thalamus ; Mineralization ; X-ray microanalysis

Quelle: Springer Online Journal Archives 1860-2000

Thema: Medizin

Notizen: Summary Spontaneous mineralization observed in the thalamus, and meninges of the median longitudinal fissure, of several strains of mice was studied by light and electron microscopy. The mineralized deposits were closely associated with blood vessels, were periodic acid-Schiff positive, and contained variable amounts of calcium. The thalamic deposits were found to be in an extra-cellular location, and consisted of a randomly arranged mass of fine fibrils or spicules, with laminations of varying electron density in larger deposits. The deposits appeared to develop on the surface of subendothelial and medial, vascular basement membranes. Energy dispersive, X-ray microanalysis demonstrated the presence of both calcium and phosphorus in small and large deposits.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00691652

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Digitale Medien

Series operation of power MOSFETs for high-speed, high-voltage switching applications (1993)

Baker, R. J. ; Johnson, B. P.

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 64 (1993), S. 1655-1656

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ISSN: 1089-7623

Quelle: AIP Digital Archive

Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik

Notizen: Series operation of power metal-oxide semiconductor field-effect transistors (MOSFETs) to increase their effective hold off voltage is described. The design procedure presented is a modification of a recently reported [Baker and Johnson, Rev. Sci. Instrum. 63, 5799 (1992)] method. Comments are made on implementing MOSFET stacks in various types of instrumentation.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1144043

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Digitale Medien

Stacking power MOSFETs for use in high speed instrumentation (1992)

Baker, R. J. ; Johnson, B. P.

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 63 (1992), S. 5799-5801

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ISSN: 1089-7623

Quelle: AIP Digital Archive

Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik

Notizen: A reliable circuit configuration is described for stacking power metal–oxide semiconductor field effect transistors (MOSFETs). The resulting circuit has a hold off voltage N times larger than a single power MOSFET, where N is the number of power MOSFETs used. The capability to switch higher voltages and thus greater amounts of power, into a 50 Ω load, in approximately the same time as a single device is realized. Design considerations are presented for selecting a power MOSFET. Using the design method presented, a 1.4 kV pulse generator, into 50 Ω, with a 2 ns rise time and negligible jitter is designed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1143366

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