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  • 1
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2415-2417 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have identified a resist material that is suitable for high-speed, nanometer-scale scanning probe lithography (SPL) using the atomic force microscope (AFM). The material is siloxene, commonly known as spin on glass (SOG). The SOG film is deposited on a silicon sample and exposed with a voltage applied between the AFM tip (negative) and the silicon substrate (positive). Voltages of 70 V and currents of 1 nA are typical. It is a positive resist where the etch selectivity between the exposed and unexposed areas is greater than 20. We have recorded line widths as narrow as 40 nm. The writing speed is greater than 1 mm/s, which we believe to be an important attribute in future systems for SPL. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3674-3676 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Broadband transmission of ultrasound in water using capacitive, micromachined transducers is reported. Transmission experiments using the same pair of devices at 4, 6, and 8 MHz with a signal-to-noise ratio greater than 48 dB are presented. Transmission is observed from 1 to 20 MHz. Better receiving electronics are necessary to demonstrate operation beyond this range. Furthermore, the same pair of transducers is operated at resonance to demonstrate ultrasound transmission in air at 6 MHz. The versatile transducers are made using silicon surface micromachining techniques. Computer simulations confirm the experimental results and are used to show that this technology promises to yield immersion transducers that are competitive with piezoelectric devices in terms of performance, enabling systems with 130 dB dynamic range. The advantage of the micromachined transducers is that they can be operated in high-temperature environments and that arrays can be fabricated at lower cost. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 703-705 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using the atomic force microscope (AFM), we have fabricated a metal oxide semiconductor field-effect transistor (MOSFET) on silicon with an effective channel length of 0.1 μm. The lithography at the gate level was performed with the scanning tip of the AFM. The gate was defined by electric-field-enhanced selective oxidation of the amorphous silicon gate electrode. The electrical characteristics were reasonable with a transconductance of 279 mS/mm and a threshold voltage of 0.55 V. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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