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  • 1
    Electronic Resource
    Electronic Resource
    Silicon micromachined ultrasonic immersion transducers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3674-3676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Broadband transmission of ultrasound in water using capacitive, micromachined transducers is reported. Transmission experiments using the same pair of devices at 4, 6, and 8 MHz with a signal-to-noise ratio greater than 48 dB are presented. Transmission is observed from 1 to 20 MHz. Better receiving electronics are necessary to demonstrate operation beyond this range. Furthermore, the same pair of transducers is operated at resonance to demonstrate ultrasound transmission in air at 6 MHz. The versatile transducers are made using silicon surface micromachining techniques. Computer simulations confirm the experimental results and are used to show that this technology promises to yield immersion transducers that are competitive with piezoelectric devices in terms of performance, enabling systems with 130 dB dynamic range. The advantage of the micromachined transducers is that they can be operated in high-temperature environments and that arrays can be fabricated at lower cost. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117185
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Nanometer scale lithography at high scanning speeds with the atomic force microscope using spin on glass (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2415-2417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have identified a resist material that is suitable for high-speed, nanometer-scale scanning probe lithography (SPL) using the atomic force microscope (AFM). The material is siloxene, commonly known as spin on glass (SOG). The SOG film is deposited on a silicon sample and exposed with a voltage applied between the AFM tip (negative) and the silicon substrate (positive). Voltages of 70 V and currents of 1 nA are typical. It is a positive resist where the etch selectivity between the exposed and unexposed areas is greater than 20. We have recorded line widths as narrow as 40 nm. The writing speed is greater than 1 mm/s, which we believe to be an important attribute in future systems for SPL. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114565
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication of 0.1 μm metal oxide semiconductor field-effect transistors with the atomic force microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 703-705 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the atomic force microscope (AFM), we have fabricated a metal oxide semiconductor field-effect transistor (MOSFET) on silicon with an effective channel length of 0.1 μm. The lithography at the gate level was performed with the scanning tip of the AFM. The gate was defined by electric-field-enhanced selective oxidation of the amorphous silicon gate electrode. The electrical characteristics were reasonable with a transconductance of 279 mS/mm and a threshold voltage of 0.55 V. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114105
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    Paper (German National Licenses)
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